M29W160EB7AN6E NUMONYX, M29W160EB7AN6E Datasheet
M29W160EB7AN6E
Specifications of M29W160EB7AN6E
Related parts for M29W160EB7AN6E
M29W160EB7AN6E Summary of contents
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FEATURES SUMMARY SUPPLY VOLTAGE – 2.7V to 3.6V for Program, Erase CC and Read ACCESS TIMES: 70, 90ns PROGRAMMING TIME – 10μs per Byte/Word typical 35 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 ...
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M29W160ET, M29W160EB TABLE OF CONTENTS FEATURES SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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Unlock Bypass Reset Command ...
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M29W160ET, M29W160EB PART NUMBERING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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SUMMARY DESCRIPTION The M29W160E Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be per- formed using a single low voltage (2.7 to 3.6V) supply. On power-up the ...
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M29W160ET, M29W160EB Figure 3. TSOP Connections 6/42 A15 1 48 A14 A13 A12 A11 A10 A9 A8 A19 M29W160ET M29W160EB A18 A17 ...
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Figure 4. TFBGA Connections (Top view through package A17 A18 ...
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M29W160ET, M29W160EB Figure 5. FBGA 64-ball Connections (Top view through package 8/42 ...
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Figure 6. Block Addresses (x8) M29W160ET Top Boot Block Addresses (x8) 1FFFFFh 16 KByte 1FC000h 1FBFFFh 8 KByte 1FA000h 1F9FFFh 8 KByte 1F8000h 1F7FFFh 32 KByte 1F0000h 1EFFFFh 64 KByte 1E0000h 01FFFFh 64 KByte 010000h 00FFFFh 64 KByte 000000h Note: ...
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M29W160ET, M29W160EB Figure 7. Block Addresses (x16) M29W160ET Top Boot Block Addresses (x16) FFFFFh 8 KWord FE000h FDFFFh 4 KWord FD000h FCFFFh 4 KWord FC000h FBFFFh 16 KWord F8000h F7FFFh 32 KWord F0000h 0FFFFh 32 KWord 08000h 07FFFh 32 KWord ...
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SIGNAL DESCRIPTIONS See Figure 2, Logic Diagram, and Table 1, Signal Names, for a brief overview of the signals connect this device. Address Inputs (A0-A19). The Address Inputs select the cells in the memory array to access dur- ...
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M29W160ET, M29W160EB BUS OPERATIONS There are five standard bus operations that control the device. These are Bus Read, Bus Write, Out- put Disable, Standby and Automatic Standby. See Tables 2 and 3, Bus Operations, for a summary. Typically glitches of ...
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... From the Auto Select mode the Manufacturer Code can be read using a Bus Read operation with may be set to either V Code for Numonyx is 0020h. The Device Code can be read using a Bus Read operation with address bits may be set to either V Device Code for the M29W160ET is 22C4h and for the M29W160EB is 2249h ...
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M29W160ET, M29W160EB has occurred. When an error occurs the memory continues to output the Status Register. A Read/ Reset command must be issued to reset the error condition and return to Read mode. Note that the Program command cannot change ...
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Block Erase operation and return the memory to Read mode. The command requires one Bus Write operation. The Program/Erase Controller will suspend within the Erase Suspend Latency Time (refer to Table 6 for value) of the Erase Suspend Command being ...
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M29W160ET, M29W160EB Table 4. Commands, 16-bit mode, BYTE = V Command Addr 1 X Read/Reset 3 555 Auto Select 3 555 Program 4 555 Unlock Bypass 3 555 Unlock Bypass 2 X Program Unlock Bypass Reset 2 X Chip Erase ...
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Table 5. Commands, 8-bit mode, BYTE = V Command Addr 1 X Read/Reset 3 AAA Auto Select 3 AAA Program 4 AAA Unlock Bypass 3 AAA Unlock Bypass 2 X Program Unlock Bypass Reset 2 X Chip Erase 6 AAA ...
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M29W160ET, M29W160EB Table 6. Program/Erase Times and Program/Erase Endurance Cycles Parameter Chip Erase Block Erase (64 KBytes) Erase Suspend Latency Time Program (Byte or Word) Chip Program (Byte by Byte) Chip Program (Word by Word) Program/Erase Cycles (per Block) Data ...
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Note that the Program command cannot change a bit set to ’0’ back to ’1’ and attempting will set DQ5 to ‘1’. A Bus Read operation to that ad- dress will show the bit is still ‘0’. ...
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... AI03598 stress ratings only and operation of the device at these or any other conditions above those indicat the Operating sections of this specification is not implied. Refer also to the Numonyx SURE Pro- gram and other relevant quality documents. Parameter (1,2) +2V during transition and for less than 20ns during transitions. ...
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DC AND AC PARAMETERS This section summarizes the operating measure- ment conditions, and the DC and AC characteris- tics of the device. The parameters in the DC and AC characteristics Tables that follow, are derived from tests performed under the ...
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M29W160ET, M29W160EB Table 10. Device Capacitance Symbol Parameter C Input Capacitance IN C Output Capacitance OUT Note: Sampled only, not 100% tested. Table 11. DC Characteristics Symbol Parameter I Input Leakage Current LI I Output Leakage Current LO I Supply ...
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Figure 12. Read Mode AC Waveforms A0-A19/ A– DQ0-DQ7/ DQ8-DQ15 BYTE tELBL/tELBH Table 12. Read AC Characteristics Symbol Alt t t Address Valid to Next Address Valid AVAV Address Valid to Output Valid AVQV ACC ...
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M29W160ET, M29W160EB Figure 13. Write AC Waveforms, Write Enable Controlled A0-A19/ A– DQ0-DQ7/ DQ8-DQ15 V CC tVCHEL RB Table 13. Write AC Characteristics, Write Enable Controlled Symbol Alt t t Address Valid to Next Address Valid AVAV ...
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Figure 14. Write AC Waveforms, Chip Enable Controlled A0-A19/ A– DQ0-DQ7/ DQ8-DQ15 V CC tVCHWL RB Table 14. Write AC Characteristics, Chip Enable Controlled Symbol Alt t t Address Valid to Next Address Valid AVAV WC t ...
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M29W160ET, M29W160EB Figure 15. Reset/Block Temporary Unprotect AC Waveforms tPLPX RP Table 15. Reset/Block Temporary Unprotect AC Characteristics Symbol Alt (1) t PHWL RP High to Write Enable Low, Chip Enable Low PHEL RH ...
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PACKAGE MECHANICAL Figure 16. TSOP48 – 48 lead Plastic Thin Small Outline 20mm, Package Outline, top view DIE Note: Drawing is not to scale. Table 16. TSOP48 – 48 lead Plastic Thin Small ...
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M29W160ET, M29W160EB Figure 17. TFBGA48 6x8mm - 6x8 ball array, 0.80 mm pitch, Package Outline, bottom view FE BALL "A1" Table 17. TFBGA48 6x8mm - 6x8 ball array, 0.80 mm pitch, Package Mechanical Data Symbol Typ A A1 ...
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Figure 18. FBGA64 mm— active ball array pitch, package outline, bottom view BALL "A1" A Table 18. FBGA64 mm— active ball array ...
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... F = RoHS, Tape & Reel Packing Devices are shipped from the factory with the memory content bits erased to ’1’. For a list of available options (Speed, Package, etc.) or for further information on any aspect of this device, please contact the Numonyx Sales Office nearest to you. 30/42 M29W160EB ...
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APPENDIX A. BLOCK ADDRESS TABLE Table 20. Top Boot Block Addresses, M29W160ET Size Address Range # (KBytes) (x8 1FC000h-1FFFFFh 33 8 1FA000h-1FBFFFh 32 8 1F8000h-1F9FFFh 31 32 1F0000h-1F7FFFh 30 64 1E0000h-1EFFFFh 29 64 1D0000h-1DFFFFh 28 64 1C0000h-1CFFFFh 27 ...
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... Table 27, Security Code area). This area can be accessed only in Read mode by the final user impossible to change the security num- ber after it has been written by Numonyx. Issue a Read command to return to Read mode. Note: The Common Flash Interface is only avail- able for Temperature range 6 (–40 to 85°C). ...
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Table 24. CFI Query System Interface Information Address Data x16 x8 1Bh 36h 0027h 1Ch 38h 0036h 1Dh 3Ah 0000h 1Eh 3Ch 0000h 1Fh 3Eh 0004h 20h 40h 0000h 21h 42h 000Ah 22h 44h 0000h 23h 46h 0004h 24h 48h ...
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M29W160ET, M29W160EB Table 25. Device Geometry Definition Address Data x16 x8 27h 4Eh 0015h 28h 50h 0002h 29h 52h 0000h 2Ah 54h 0000h 2Bh 56h 0000h 2Ch 58h 0004h 2Dh 5Ah 0000h 2Eh 5Ch 0000h 2Fh 5Eh 0040h 30h 60h ...
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Table 26. Primary Algorithm-Specific Extended Query Table Address Data x16 x8 40h 80h 0050h 41h 82h 0052h 42h 84h 0049h 43h 86h 0031h 44h 88h 0030h 45h 8Ah 0000h 46h 8Ch 0002h 47h 8Eh 0001h 48h 90h 0001h 49h 92h ...
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M29W160ET, M29W160EB APPENDIX C. BLOCK PROTECTION Block protection can be used to prevent any oper- ation from modifying the data stored in the Flash memory. Each Block can be protected individually. Once protected, Program and Erase operations on the block ...
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Figure 19. Programmer Equipment Block Protect Flowchart Note: 1. Address Inputs A19-A12 give the address of the block that protected imperative that they remain stable during the operation. 2. During the Protect and Verify phases ...
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M29W160ET, M29W160EB Figure 20. Programmer Equipment Chip Unprotect Flowchart NO = 1000 38/42 START PROTECT ALL BLOCKS CURRENT BLOCK = 0 A6, A12, A15 = V IH (1) ...
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Figure 21. In-System Equipment Block Protect Flowchart START WRITE 60h ADDRESS = BLOCK ADDRESS WRITE 60h ADDRESS = BLOCK ...
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M29W160ET, M29W160EB Figure 22. In-System Equipment Chip Unprotect Flowchart NO = 1000 ISSUE READ/RESET COMMAND FAIL 40/42 START PROTECT ALL BLOCKS CURRENT BLOCK = WRITE 60h ANY ADDRESS ...
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... Appendix C, BLOCK PROTECTION. TSOP48 package information updated (see Figure 16 and Table 16). Block Erase Command clarified. Applied Numonyx branding. Added FBGA (ZS) package and ballout information. Revised Chip Erase signal value (maximum) in Table 6., Program/Erase Times and Program/Erase Endurance Cycles from 120 to 60 seconds Revised Block Erase (64-Kbytes) signal value (maximum) in Table 6 ...
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... WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT Numonyx products are not intended for use in medical, life saving, life sustaining, critical control or safety systems nuclear facility applications. Numonyx may make changes to specifications and product descriptions at any time, without notice. ...