HL6313G-A Opnext, HL6313G-A Datasheet

no-image

HL6313G-A

Manufacturer Part Number
HL6313G-A
Description
Laser Diode MQW-LD 640nm 5mW 3-Pin
Manufacturer
Opnext
Type
MQW-LDr
Datasheet

Specifications of HL6313G-A

Maximum Optical Output Power
5 mW
Maximum Optical Output Power Range
5 to 50 mW
Maximum Operating Current
85 mA
Laser Reverse Voltage
2 V
Photodiode Reverse Voltage
30 V
Wavelength
640 nm
HL6312G/13G
AlGaInP Laser Diodes
Description
The HL6312G/13G are 0.63 μm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. Wavelength
is equal to He-Ne Gas laser. They are suitable as light sources in bar code readers, laser levelers and various other types
of optical equipment. Hermetic sealing of the package achieves high reliability.
Features
• Visible light output: λp = 635 nm Typ
• Single longitudinal mode
• Optical output power: 5 mW CW
• Low Operating voltage: 2.7 V Max
• Built-in photodiode for monitoring laser output
• TM mode oscillation
Absolute Maximum Ratings
Optical output power
Pulse optical output power
LD reverse voltage
PD reverse voltage
Operating temperature
Storage temperature
Note: Pulse condition : Pulse width ≤ 1 μs , duty ≤ 50%
Optical and Electrical Characteristics
Threshold current
Operating current
Operating voltage
Beam divergence
parallel to the junction
Beam divergence
perpendicular to the junction
Astigmatism
Lasing wavelength
Monitor current
Rev.0 Aug. 01, 2008 page 1 of 4
Item
Item
Ith
I
V
θ//
θ⊥
A
λp
I
OP
S
Symbol
OP
S
P
P
V
V
Topr
Tstg
O
O(pulse)
R(LD)
R(PD)
Min
625
0.2
20
25
5
Symbol
Typ
635
0.4
45
55
31
8
8
Package Type
HL6312G/13G: LD/G2
Max
640
2.7
0.8
70
85
11
37
–10 to +50
–40 to +85
Ratings
6 *
30
5
2
PD
Unit
mA
mA
μm
nm
mA
V
°
°
Internal Circuit
1
HL6312G
2
P
P
P
P
P
P
P
3
O
O
O
O
O
O
O
= 5 mW
= 5 mW
= 5 mW
= 5 mW
= 5 mW, NA = 0.55
= 5 mW
= 5 mW, V
LD
Test Conditions
ODE2008-00 (M)
PD
Aug. 01, 2008
Internal Circuit
1
HL6313G
R(PD)
(T
Unit
(T
mW
mW
°C
°C
V
V
2
C
C
= 25°C)
= 25°C)
= 5 V
Rev.0
3
LD

Related parts for HL6313G-A

HL6313G-A Summary of contents

Page 1

... R(LD) V R(PD) Topr –10 to +50 Tstg –40 to +85 Min Typ Max — — — 2 — 8 — 625 635 640 0.2 0.4 0.8 ODE2008-00 (M) Rev.0 Aug. 01, 2008 Internal Circuit Internal Circuit HL6312G HL6313G 25°C) C Unit °C ° 25°C) C Unit Test Conditions mA — ° ...

Page 2

HL6312G/13G Typical Characteristic Curves Optical Output Power vs. Forward Current Forward current, I Slope Efficiency vs. Case Temperature 0.5 0.4 0.3 0.2 0 ...

Page 3

HL6312G/13G Package Dimensions Rev.0 Aug. 01, 2008 page 9.0 –0.025 1.0 ± 0.1 (0.65) +0.3 7.2 –0.2 6.2 ± 0.2 ( 2.0) Emitting Point 3 – 0.45 ± 0 2.54 ...

Page 4

... HL6312G/13G Cautions 1. Opnext Japan,Inc.(OPJ) neither warrants nor grants licenses of any our rights or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. OPJ bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document ...

Related keywords