PUMH14,115 NXP Semiconductors, PUMH14,115 Datasheet - Page 4

• Manufacturer Part Number: PUMH14,115
• Description: TRANS NPN 50V 100MA SOT363
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PUMH14,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 1mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Configuration: Dual
• Transistor Polarity: NPN
• Typical Input Resistor: 47 KOhm
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Resistor - Emitter Base (r2) (ohms): -
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Resistor - Emitter Base (r2) (ohms): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934057895115; PUMH14 T/R; PUMH14 T/R

NXP Semiconductors
7. Characteristics
PEMH14_PUMH14_3
Product data sheet
Fig 1.
h
(1) T
(2) T
(3) T
FE
10
10
3
2
10
V
DC current gain as a function of collector
current; typical values
−1
CE
amb
amb
amb
= 5 V
= 100 °C
= 25 °C
= −40 °C
1
Table 8.
T
(1)
(2)
(3)
Symbol
Per transistor
I
I
I
h
V
R1
C
CBO
CEO
EBO
amb
FE
CEsat
c
= 25
°
C unless otherwise specified.
10
Characteristics
Parameter
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
bias resistor 1 (input)
collector capacitance
I
C
006aaa182
(mA)
Rev. 03 — 15 November 2009
NPN/NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = open
10
2
Conditions
V
V
V
T
V
V
I
V
f = 1 MHz
C
j
CB
CE
CE
EB
CE
CB
= 150 °C
= 10 mA; I
Fig 2.
= 5 V; I
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 10 V; I
V
(mV)
CEsat
(1) T
(2) T
(3) T
10
10
10
3
2
C
1
C
I
Collector-emitter saturation voltage as a
function of collector current; typical values
C
amb
amb
amb
E
B
B
B
E
/I
= 0 A
= 1 mA
B
= 0 A
= 0 A
= 0 A;
= 0.5 mA
= i
= 20
= 100 °C
= 25 °C
= −40 °C
e
= 0 A;
PEMH14; PUMH14
Min
-
-
-
-
100
-
33
-
10
(2)
47
Typ
-
-
-
-
-
-
-
(1)
(3)
I
C
(mA)
© NXP B.V. 2009. All rights reserved.
006aaa183
Max
100
1
50
100
-
150
61
2.5
10
2
Unit
nA
μA
μA
nA
mV
kΩ
pF
4 of 8