PUMH18,115 NXP Semiconductors, PUMH18,115 Datasheet

TRANS NPN 50V 100MA SOT363

PUMH18,115

Manufacturer Part Number
PUMH18,115
Description
TRANS NPN 50V 100MA SOT363
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PUMH18,115

Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
4.7K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 10mA, 5V
Vce Saturation (max) @ Ib, Ic
100mV @ 500µA, 10mA
Current - Collector Cutoff (max)
1µA
Power - Max
300mW
Mounting Type
Surface Mount
Configuration
Dual
Transistor Polarity
NPN
Typical Input Resistor
4.7 KOhm
Typical Resistor Ratio
0.47
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057899115
PUMH18 T/R
PUMH18 T/R
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
NPN/NPN Resistor-Equipped Transistors (RET).
Table 1.
Table 2.
Type number
PEMH18
PUMH18
Symbol
V
I
R1
R2/R1
O
CEO
PEMH18; PUMH18
NPN/NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 10 kΩ
Rev. 03 — 20 November 2009
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
Low current peripheral driver
Control of IC inputs
Replaces general-purpose transistors in digital applications
Product overview
Quick reference data
Parameter
collector-emitter voltage
output current
bias resistor 1 (input)
bias resistor ratio
Package
NXP
SOT666
SOT363
JEITA
-
SC-88
Conditions
open base
NPN/PNP
complement
PEMD18
PUMD18
Min
-
-
3.3
1.7
Typ
-
-
4.7
2.1
Product data sheet
PNP/PNP
complement
PEMB18
PUMB18
Max
50
100
6.1
2.6
Unit
V
mA

Related parts for PUMH18,115

PUMH18,115 Summary of contents

Page 1

PEMH18; PUMH18 NPN/NPN resistor-equipped transistors 4.7 kΩ kΩ Rev. 03 — 20 November 2009 1. Product profile 1.1 General description NPN/NPN Resistor-Equipped Transistors (RET). Table 1. Type number PEMH18 PUMH18 1.2 Features Built-in bias resistors ...

Page 2

... NXP Semiconductors 2. Pinning information Table 3. Pin Ordering information Table 4. Type number PEMH18 PUMH18 4. Marking Table 5. Type number PEMH18 PUMH18 [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PEMH18_PUMH18_3 Product data sheet NPN/NPN resistor-equipped transistors 4.7 kΩ kΩ Pinning Description ...

Page 3

... NXP Semiconductors 5. Limiting values Table 6. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per transistor V CBO V CEO V EBO tot T stg amb Per device P tot [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. ...

Page 4

... NXP Semiconductors 6. Thermal characteristics Table 7. Symbol Per transistor R th(j-a) Per device R th(j-a) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. 7. Characteristics Table 8. ° amb Symbol Per transistor I CBO I CEO I EBO h FE ...

Page 5

... NXP Semiconductors − 100 °C (1) T amb = 25 °C (2) T amb = −40 °C (3) T amb Fig 1. DC current gain as a function of collector current; typical values I(on) ( −1 10 − 0 −40 °C (1) T amb = 25 °C (2) T amb = 100 °C (3) T amb Fig 3. On-state input voltage as a function of collector current ...

Page 6

... NXP Semiconductors 8. Package outline 2.2 1 2.2 1.35 2.0 1.15 pin 1 index 0.3 0.65 0.2 1.3 Dimensions in mm Fig 5. Package outline SOT363 (SC-88) 9. Packing information Table 9. The indicated -xxx are the last three digits of the 12NC ordering code. Type number Package Description ...

Page 7

... Revision history Document ID Release date PEMH18_PUMH18_3 20091120 • Modifications: This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Figure 5 “Package outline SOT363 PEMH18_PUMH18_2 20050609 PUMH18_1 ...

Page 8

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 9

... NXP Semiconductors 13. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6 9 Packing information . . . . . . . . . . . . . . . . . . . . . 6 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 7 11 Legal information ...

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