ZXT10P40DE6TA Diodes Zetex, ZXT10P40DE6TA Datasheet - Page 4

• Manufacturer Part Number: ZXT10P40DE6TA
• Description: TRANS SW PNP LO SAT 40V SOT23-6
• Manufacturer: Diodes Zetex

Specifications of ZXT10P40DE6TA

• Transistor Type: PNP
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 200mA, 2A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 180 @ 1A, 2V
• Power - Max: 1.1W
• Frequency - Transition: 190MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXT10P40DE6TATR

ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
ZXT10P40DE6
SYMBOL
V
V
V
I
I
I
V
V
V
h
f
C
t
t
CBO
EBO
CES
T
(on)
(off)
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
BE(on)
obo
amb
MIN.
-40
-40
-5
300
300
180
150
= 25°C unless otherwise stated).
60
12
4
TYP.
-80
-70
-8.8
480
450
290
130
40
435
-210
-0.85
22
-150
-195
-0.95
190
19
-25
2%
MAX.
-100
-100
-100
-220
-300
-300
-1.00
-0.95
25
-40
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
mV
V
V
MHz
pF
ns
ns
ISSUE 1 - SEPTEMBER 2000
CONDITIONS.
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
f=100MHz
V
V
I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
B1
CB
EB
CES
CB
CC
=-100 A
=-100 A
=-10mA*
=-0.1A, I
=-1A, I
=-1.5A, I
=-2A, I
=-2A, I
=-2A, V
=-10mA, V
=-0.1A, V
=-1A, V
=-1.5A, V
=-3A, V
=-50mA, V
=I
=-35V
=-4V
=-10V, f=1MHz
=-15V, I
B2
=-35V
=-15mA
B
B
B
CE
CE
CE
=-50mA*
=-200mA*
=-200mA*
B
B
CE
CE
=-10mA*
=-50mA*
=-2V*
=-2V*
=-2V*
C
CE
CE
=-0.75A
=-2V*
=-2V*
=-2V*
=-10V