ZXT13P12DE6TA Diodes Zetex, ZXT13P12DE6TA Datasheet - Page 4

• Manufacturer Part Number: ZXT13P12DE6TA
• Description: TRANS PNP LOSAT -12V -4A SOT23-6
• Manufacturer: Diodes Zetex

Specifications of ZXT13P12DE6TA

• Transistor Type: PNP
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 12V
• Vce Saturation (max) @ Ib, Ic: 175mV @ 400mA, 4A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 1A, 2V
• Power - Max: 1.1W
• Frequency - Transition: 55MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXT13P12DE6TR

ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle  2%
ISSUE 1 - DECEMBER 1999
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
SYMBOL
V
V
V
I
I
I
V
V
V
h
f
C
t
t
CBO
EBO
CES
T
(on)
(off)
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
BE(on)
obo
amb
MIN.
-20
-12
-7.5
300
300
200
= 25°C unless otherwise stated).
20
4
TYP.
-33
-25
-8.5
500
450
300
55
115
70
265
-150
30
-135
-200
-68
-7.5
MAX.
-100
-100
-100
-175
-250
-175
-1.0
-0.9
900
-90
-10
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
V
V
MHz
pF
ns
ns
ZXT13P12DE6
CONDITIONS.
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
f=50MHz
V
I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
V
B1
CB
EB
CES
CB
=-100 A
=-100 A
=-10mA*
=-0.1A, I
=-1A, I
=-3A, I
=-4A, I
=-4A, I
=-4A, I
=-4A, V
=-10mA, V
=-1A, V
=-4A, V
=-15A, V
=-50mA, V
CC
=I
=-16V
=-6V
=-10V, f=1MHz
=-10V, I
B2
=-16V
=-60mA
B
B
B
B
B
CE
CE
CE
=-10mA*
=-50mA*
=-50mA*
=-400mA*
=-50mA*
B
CE
=-10mA*
=-2V*
=-2V*
=-2V*
C
CE
CE
=-2V*
=-3A
=-2V*
=-10V