BC639 Fairchild Semiconductor, BC639 Datasheet
BC639
Manufacturer Part Number
BC639
Description
TRANSISTOR NPN 80V 1A TO-92
Manufacturer
Fairchild Semiconductor
Datasheet
1.BC639.pdf
(4 pages)
Specifications of BC639
Transistor Type
NPN
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
500mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 150mA, 2V
Power - Max
1W
Frequency - Transition
100MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
1 A
Maximum Dc Collector Current
1 A
Power Dissipation
1 W
Maximum Operating Frequency
200 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
40
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BC639
Manufacturer:
N/A
Quantity:
20 000
Company:
Part Number:
BC639 DZ
Manufacturer:
FAIRCHILD
Quantity:
306
Company:
Part Number:
BC639-16
Manufacturer:
FSC
Quantity:
1 076
Company:
Part Number:
BC639-16
Manufacturer:
PHI/FSC
Quantity:
14 500
Part Number:
BC639-16
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
BC63916
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2002 Fairchild Semiconductor Corporation
Switching and Amplifier Applications
• Complement to BC636/638/640
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
PW=5ms, Duty Cycle=10%
V
V
V
V
I
I
I
P
T
T
BV
I
I
h
h
h
V
V
f
C
CP
B
CBO
EBO
T
Symbol
J
STG
FE1
FE2
FE3
CER
CES
CEO
EBO
C
CE
BE
CEO
Symbol
(on)
(sat)
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Collector-Emitter Voltage at R
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
: BC635
: BC637
: BC639
: BC635
: BC637/BC639
: All
: All
T
a
=25 C unless otherwise noted
BC635/637/639
T
: BC635
: BC637
: BC639
: BC635
: BC637
: BC639
: BC635
: BC637
: BC639
Parameter
a
=25 C unless otherwise noted
BE
=1K
I
V
V
V
V
V
I
V
V
f=50MHz
C
C
CB
EB
CE
CE
CE
CE
CE
=10mA, I
=500mA, I
=5V, I
=30V, I
=2V, I
=2V, I
=2V, I
=2V, I
=5V, I
Test Condition
C
C
C
C
C
C
=0
B
E
=5mA
=150mA
=500mA
=500mA
=10mA,
=0
=0
B
=50mA
1. Emitter 2. Collector 3. Base
Min.
1
45
60
80
25
40
40
25
-65 ~ 150
Value
100
100
100
150
1.5
45
60
45
60
45
60
80
1
Typ.
100
5
1
TO-92
Max.
250
160
0.1
0.1
0.5
1
Rev. B2, December 2002
Units
mA
W
V
V
V
V
V
V
V
V
V
V
A
A
C
C
Units
MHz
V
V
V
V
V
A
A
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BC639 Summary of contents
Page 1
... Collector-Emitter Saturation Voltage CE V (on) Base-Emitter On Voltage BE f Current Gain Bandwidth Product T ©2002 Fairchild Semiconductor Corporation BC635/637/639 T =25 C unless otherwise noted a Parameter = BC635 : BC637 : BC639 : BC635 : BC637 : BC639 : BC635 : BC637 : BC639 T =25 C unless otherwise noted a Test Condition I =10mA =30V =5V =2V, I =5mA ...
Page 2
... B 160 120 [V], COLLECTOR-EMITTER VOLTAGE CE Figure 1. Static Characteristic 10 V (sat 0.1 V (sat [mA], COLLECTOR CURRENT C Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 [V], COLLECTOR-BASE VOLTAGE CB Figure 5. Collector Output Capacitance ©2002 Fairchild Semiconductor Corporation 1000 100 1000 100 10 1 ...
Page 3
... Package Dimensions ©2002 Fairchild Semiconductor Corporation TO-92 Dimensions in Millimeters Rev. B2, December 2002 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...