UMT3904T106 Rohm Semiconductor, UMT3904T106 Datasheet - Page 3

• Manufacturer Part Number: UMT3904T106
• Description: TRANSISTOR NPN 40V 0.2A SOT-323
• Manufacturer: Rohm Semiconductor

Specifications of UMT3904T106

• Transistor Type: NPN
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Current - Collector Cutoff (max): 50nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 200mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 40V
• Power Dissipation Pd: 200mW
• Dc Collector Current: 200mA
• Transistor Case Style: SOT-323
• No. Of Pins: 3
• Svhc: No SVHC (18-Jun-2010)
• Dc: RoHS Compliant
• Configuration: Single
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.2 A
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 0.2 W
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 40
• Gain Bandwidth Product Ft: 300 MHz
• Dc Current Gain Hfe: 100
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: UMT3904T106TR

Transistors
Fig.7 Grounded emitter propagation
1000
500
100
100
1.8
1.6
1.2
0.8
0.4
10
10
0.01
5
0
Fig.10 Storage time vs. collector
0.1
1.0
characteristics
15V
COLLECTOR CURRENT : I
COLLECTOR CURRENT : I
40V
V
current
CE
=3V
1.0
Fig.5 AC current gain vs. collector current
0.1
10
COLLECTOR CURRENT : I
10
Ta=25 °C
I
C
=10I
C
C
(
(
Ta=25 °C
V
B1
mA)
mA)
CE
=10I
=5V
B2
100
100
1.0
1000
1000
100
100
C
10
10
(
1.0
mA)
1.0
Fig.8 Turn-on time vs. collector
Fig.11 Fall time vs. collector
V
COLLECTOR CURRENT : I
CC
COLLECTOR CURRENT : I
10
=3V
current
15V
40V
current
Ta=25 °C
V
f=1kHz
10
UMT3904 / SST3904 / MMST3904
CE
10
=5V
100
Ta=25 °C
I
C
C
C
(
/ I
mA)
Ta=25 °C
V
I
(
C
mA)
B
CC
/I
=10
B
=40V
=10
100
100
1000
1.8
1.6
1.2
0.8
0.4
0.5
100
50
10
Fig.6 Base-emitter saturation
10
0
1
0.1
0.1
Fig.12 Input / output capacitance
1.0
Fig.9 Rise time vs. collector
voltage vs. collector current
COLLECTOR CURRENT : I
COLLECTOR CURRENT : I
REVERSE BIAS VOLTAGE (
vs. voltage
current
1.0
1.0
Cob
Cib
V
Rev.B
CC
=40V
10
10
10
Ta=25 °C
I
C
Ta=25°C
I
C
C
C
(
Ta=25 °C
f=1MHz
/ I
(
/ I
mA)
mA)
V)
B
3/4
B
=10
=10
100
100
100