BC848ALT1G ON Semiconductor, BC848ALT1G Datasheet - Page 3

• Manufacturer Part Number: BC848ALT1G
• Description: TRANS NPN LP 100MA 30V SOT23
• Manufacturer: ON Semiconductor

Specifications of BC848ALT1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 110 @ 2mA, 5V
• Power - Max: 225mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 0.1 A
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 225 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 110 at 2 mA at 5 V
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BC848ALT1GOSTR

Product Bulletin #16134
AFFECTED DEVICE LIST
PART
2N7002ET1G
2N7002LT1
2N7002LT1G
BAS116LT1G
BAS16LT1
BAS16LT1G
BAS19LT1G
BAS20LT1G
BAS21LT1
BAS21LT1G
BAS21LT1H
BAS21LT3
BAS21LT3G
BAS40-04LT1
BAS40-04LT1G
BAS40-06LT1G
BAS40LT1
BAS40LT1G
BAS70-04LT1
BAS70-04LT1G
BAS70LT1G
BAT54ALT1
BAT54ALT1G
BAT54CLT1G
BAT54LT1
BAT54SLT1
BAT54SLT1G
BAV199LT1
BAV199LT1G
BAV70LT1
BAV70LT1G
BAV70LT3G
BAV74LT1G
BAV99LT1G
BAV99LT3G
BAW56LT1
BAW56LT1G
BAW56LT3G
BC807-16LT1
BC807-16LT1G
BC807-16LT3G
BC807-25LT1
BC807-25LT1G
BC807-25LT3G
BC807-40LT1
BC807-40LT1G
BC807-40LT3G
BC817-16LT1
BC817-16LT1G
BC817-16LT3G
BC817-25LT1
BC817-25LT1G
BC817-25LT1H
Issue Date: 11 Jul 2008
Rev.07-02-06
Page 3 of 14