MMBT3904TT1G ON Semiconductor, MMBT3904TT1G Datasheet

TRANS GP SS NPN 40V SOT416

MMBT3904TT1G

Manufacturer Part Number
MMBT3904TT1G
Description
TRANS GP SS NPN 40V SOT416
Manufacturer
ON Semiconductor
Datasheet

Specifications of MMBT3904TT1G

Transistor Type
NPN
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
300mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
200mW
Frequency - Transition
300MHz
Mounting Type
Surface Mount
Package / Case
SC-75-3, SOT-416, EMT3, 3-SSMini
Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
40V
Collector-base Voltage(max)
60V
Emitter-base Voltage (max)
6V
Collector Current (dc) (max)
200mA
Power Dissipation
300mW
Frequency (max)
300MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-416
Configuration
Single
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.2 A
Maximum Dc Collector Current
0.2 A
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
40 at 0.1 mA at 1 V
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Compliant
Other names
MMBT3904TT1GOS
MMBT3904TT1GOS
MMBT3904TT1GOSTR

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Quantity
Price
Part Number:
MMBT3904TT1G
Quantity:
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Manufacturer:
ON Semiconductor
Quantity:
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MMBT3904TT1G
0
MMBT3904TT1
General Purpose Transistors
NPN Silicon
applications. It is housed in the SOT-416/SC-75 package which is
designed for low power surface mount applications.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR-4 @ Minimum Pad
2. FR-4 @ 1.0 × 1.0 Inch Pad
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2007
June, 2007 - Rev. 4
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current - Continuous
Total Device Dissipation,
Thermal Resistance, Junction- to- Ambient
(Note 1)
Total Device Dissipation,
Thermal Resistance, Junction- to- Ambient
(Note 2)
Junction and Storage Temperature Range
This transistor is designed for general purpose amplifier
Pb-Free Package is Available
FR-4 Board (Note 1) @T
Derated above 25°C
FR-4 Board (Note 2) @T
Derated above 25°C
Characteristic
Rating
(T
A
= 25°C)
A
A
= 25°C
= 25°C
Symbol
Symbol
T
V
V
V
R
R
J
P
P
CEO
CBO
, T
EBO
I
qJA
qJA
C
D
D
stg
- 55 to +150
Value
Max
200
200
600
300
400
6.0
1.6
2.4
40
60
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
mW
°C
MMBT3904TT1
MMBT3904TT1G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation may vary depending
AMPLIFIER TRANSISTORS
upon manufacturing location.
Device
(Note: Microdot may be in either location)
GENERAL PURPOSE
3
ORDERING INFORMATION
SURFACE MOUNT
1
AM = Device Code
M
G
MARKING DIAGRAM
BASE
http://onsemi.com
1
2
1
= Date Code*
= Pb-Free Package
(Pb-Free)
SOT-416
SOT-416
Package
COLLECTOR
AM M G
EMITTER
Publication Order Number:
SOT-416/SC-75
G
3
2
CASE 463
STYLE 1
3000 Tape & Reel
3000 Tape & Reel
MMBT3904TT1/D
Shipping

Related parts for MMBT3904TT1G

MMBT3904TT1G Summary of contents

Page 1

... R 400 qJA ° +150 J stg MMBT3904TT1 MMBT3904TT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT COLLECTOR 3 1 ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 1.0 mAdc Collector-Base Breakdown Voltage = 10 mAdc Emitter-Base Breakdown Voltage = 10 mAdc ...

Page 3

D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 DUTY CYCLE = 2% 300 ns +10 -0.5 V < Figure 2. Delay and Rise Time Equivalent Test ...

Page 4

1.0 2.0 3.0 5.0 7 COLLECTOR CURRENT (mA) C Figure 6. Turn-On Time 500 300 I ...

Page 5

I , COLLECTOR CURRENT (mA) C Figure 12. Current Gain 20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.2 0.3 0.5 1.0 2 COLLECTOR CURRENT (mA) ...

Page 6

0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 1 25° BE(sat) 1.0 0.8 0.6 0 CE(sat) C 0.2 0 1.0 2.0 5 ...

Page 7

... *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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