SMBT3904E6327 Infineon Technologies, SMBT3904E6327 Datasheet - Page 3

• Manufacturer Part Number: SMBT3904E6327
• Description: TRANS NPN 40V SOT-23
• Manufacturer: Infineon Technologies

Specifications of SMBT3904E6327

• Transistor Type: NPN
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 330mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: SMBT3904; SMBT3904E6327XT; SMBT3904INTR; SMBT3904XTINTR; SMBT3904XTINTR; SP000011673

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Emitter-base breakdown voltage
I
Collector-base cutoff current
V
DC current gain
I
I
I
I
I
Collector-emitter saturation voltage
I
I
Base emitter saturation voltage
I
I
1
C
C
E
C
C
C
C
C
C
C
C
C
Pulse test: t < 300µs; D < 2%
CB
= 10 µA, I
= 1 mA, I
= 10 µA, I
= 100 µA, V
= 1 mA, V
= 10 mA, V
= 50 mA, V
= 100 mA, V
= 10 mA, I
= 50 mA, I
= 10 mA, I
= 50 mA, I
= 30 V, I
B
C
E
CE
B
B
B
B
E
= 0
CE
CE
= 0
= 0
CE
= 1 mA
= 5 mA
= 1 mA
= 5 mA
CE
= 0
1)
= 1 V
= 1 V
= 1 V
= 1 V
= 1 V
1)
A
= 25°C, unless otherwise specified
1)
3
Symbol
V
V
V
I
h
V
V
CBO
FE
(BR)CEO
(BR)CBO
(BR)EBO
CEsat
BEsat
SMBT3904...MMBT3904
min.
0.65
100
40
70
60
30
40
60
6
-
-
-
-
Values
typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
max.
0.85
0.95
300
0.2
0.3
50
2007-09-20
-
-
-
-
-
-
-
Unit
V
nA
-
V