TEA5762HB-T NXP Semiconductors, TEA5762HB-T Datasheet - Page 15

• Manufacturer Part Number: TEA5762HB-T
• Description: Tuners SELF TUNED RADIO
• Manufacturer: NXP Semiconductors

Specifications of TEA5762HB-T

• Mounting Style: SMD/SMT
• Package / Case: SOT-307
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TEA5762H/V1,518

Philips Semiconductors
AM CHARACTERISTICS
Input frequency = 1 MHz; m = 0.3; f
V
level; refer to test circuit (see Fig.9); unless otherwise specified.
FM-IF CHARACTERISTICS
Input frequency = 10.7 MHz; f = 22.5 kHz; f
refer to test circuit (see Fig.9); unless otherwise specified.
1999 Aug 04
V
V
V
PSRR
I
C
G
S/N
THD
V
V
PSRR
S/N
THD
i
i1
10
i1
il
450
10
i4
i
Self Tuned Radio (STR)
c
SYMBOL
SYMBOL
measured at input of matching network at pin 2; matching network adjusted to maximum output voltage at low input
AF output voltage
RF sensitivity
large signal voltage handling
capacity
power supply ripple rejection
input current (pin 2)
input capacitance (pin 2)
front-end conversion gain
signal-to-noise ratio
total harmonic distortion
IF suppression
AF output voltage
IF limiting sensitivity
power supply ripple rejection
signal-to-noise ratio
total harmonic distortion
----------
----------
V
V
V
V
10
10
7
7
PARAMETER
PARAMETER
mod
= 1 kHz; measured in test circuit at pin 10 (see Fig.9); S2 in position B;
mod
= 1 kHz; measured in test circuit (see Fig.9) at pin 10; S2 in position B;
V
S/N = 26 dB
m = 0.8; THD
100 Hz; V
V
V
V
V
V
V
V
V
V
100 Hz; V
V
IF filter SFE10.7MS3A20K-A
V
V
i1
44
44
44
44
i1
10
i4
10
i4
i4
7
7
= 5 mV
= 1 mV
= 10 mV
= 10 mV
= 10 mV
= 0.2 V
= 0.2 V
= 0.2 V
= 0.9 V
= 30 mV
= 3 dB; V
= 100 mV (RMS);
= 100 mV (RMS);
14
CONDITIONS
CONDITIONS
7
7
= 3.0 V
= 3.0 V
10
8%
= 0 dB at
36
40
150
5
40
MIN.
26
MIN.
44
45
55
300
0
10
50
0.8
56
48
50
0.3
TYP.
47
14
TYP.
Product specification
70
70
4
14
0
2.0
57
80
0.8
TEA5762
MAX.
MAX.
mV
mV
dB
pF
dB
dB
dB
%
dB
mV
dB
dB
%
UNIT
UNIT
V
A
V