MMBTA56-7-F Diodes Inc, MMBTA56-7-F Datasheet - Page 2

• Manufacturer Part Number: MMBTA56-7-F
• Description: TRANSISTOR PNP 80V SOT23-3
• Manufacturer: Diodes Inc

Specifications of MMBTA56-7-F

• Transistor Type: PNP
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 10mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 100mA, 1V
• Power - Max: 300mW
• Frequency - Transition: 50MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: - 4 V
• Continuous Collector Current: - 0.5 A
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 300 mW
• Maximum Operating Frequency: 50 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBTA56-FDITR

DS30054 Rev. 11 - 2
1,000
100
100
400
300
250
200
150
350
100
10
10
50
1
0
1
1
Fig. 5 Gain-Bandwidth Product vs. Collector Current
0
V
CE
Fig. 3 DC Current Gain vs. Collector Current
T = 25°C
25
A
= 5V
I , COLLECTOR CURRENT (mA)
T , AMBIENT TEMPERATURE (°C)
C
I , COLLECTOR CURRENT (mA)
C
A
Fig. 1 Max Power Dissipation vs
V
50
CE
= 5V
10
Ambient Temperature
75
T = -50°C
A
100 125
10
100
T = 150°C
150
A
Note 1
175
1,000
200
100
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1.0
0.6
0.5
0.4
0.9
0.8
0.7
0.3
0.2
0.1
0.25
0.15
0.10
0.20
0.05
0.1
0
1
Fig. 4 Base Emitter Voltage vs. Collector Current
V
CE
I
I
C
B
Fig. 2 Collector Emitter Saturation Voltage
= 10
= 5V
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
T = 150°C
A
1
vs. Collector Current
10
T = 25°C
A
10
T = -50°C
T = 25°C
100
A
A
T = 150°C
MMBTA55 / MMBTA56
A
T = -50°C
© Diodes Incorporated
A
100
1,000