MPSA64 Fairchild Semiconductor, MPSA64 Datasheet - Page 3

• Manufacturer Part Number: MPSA64
• Description: TRANSISTOR DARL PNP TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of MPSA64

• Transistor Type: PNP - Darlington
• Current - Collector (ic) (max): 1.2A
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20000 @ 100mA, 5V
• Power - Max: 625mW
• Frequency - Transition: 125MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 30 V
• Maximum Dc Collector Current: 1.2 A
• Maximum Collector Cut-off Current: 0.1 uA
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 10000
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MPSA64FS

Typical Characteristics
1.6
1.2
0.8
0.4
0.01
100
0.001
0.1
2
0
10
1
25
Voltage vs Collector Current
V
= 1000
CB
Base-Emitter Saturation
vs Ambient Temperature
Collector-Cutoff Current
= 15V
T - AMBIE NT TEMP ERATURE ( C)
I - COLLECTOR CURRENT (A)
C
A
50
25 °C
0.01
- 40 °C
75
125 °C
0.75
0.25
0.5
1
0
0.1
0
SOT-23
(continued)
TO-92
100
°
25
Ambient Temperature
Power Dissipation vs
TEMPERATURE ( C)
50
1
125
SOT-223
75
16
12
1.6
1.2
0.8
0.4
100
o
8
4
0
0.001
0.1
2
0
Input and Output Capacitance
Base Emitter ON Voltage vs
125
vs Reverse Bias Voltage
- 40 °C
PNP Darlington Transistor
I - COLLECTOR CURRENT (A)
C
Collector Current
150
REVERSE VOLTAGE (V)
0.01
1
25 °C
0.1
10
V
C
f = 1.0 MHz
CE
ib
= 5V
125 °C
C
(continued)
ob
100
1