BCP54 Fairchild Semiconductor, BCP54 Datasheet - Page 3

• Manufacturer Part Number: BCP54
• Description: TRANSISTOR NPN 45V 1.5A SOT-223
• Manufacturer: Fairchild Semiconductor

Specifications of BCP54

• Transistor Type: NPN
• Current - Collector (ic) (max): 1.5A
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 150mA, 2V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 1.5 A
• Maximum Dc Collector Current: 1.5 A
• Power Dissipation: 1.5 W
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 40
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Typical Characteristics
500
400
300
200
100
100
1.2
0.8
0.6
0.4
0.2
0.1
10
0
1
1
25
1
1
Voltage vs Collector Current
V
CE
V = 40V
Base-Emitter Saturation
= 10
CB
Gain Bandwidth Product
vs Ambient Temperature
Collector-Cutoff Current
= 10V
I
- 40 °C
C
T - AMBIENT TE MPE RATURE ( C)
vs Collector Current
I - COLLECTOR CURRENT (mA)
50
C
A
- COLLE CTOR CURRENT ( mA)
10
10
75
25°C
100
100
100
125 °
(continued)
125
C
°
1000
1000
150
0.8
0.6
0.4
0.2
1.25
0.75
0.25
0.001
1.5
0.5
1
40
30
20
10
0
1
0
NPN General Purpose Amplifier
0
0
Base-Emitter ON Voltage vs
Collector-Base Capacitance
vs Collector-Base Voltage
V
- 40 °C
4
CB
25
Ambient Temperature
I
Power Dissipation vs
- COLLECTOR-BASE VOLTAGE (V)
C
Collector Current
- COLLE CTOR CURRENT (A)
8
0.01
TEMPERATURE ( C)
25°C
50
12
SOT-223
125 °
75
16
C
20
o
0.1
100
V
CE
24
= 5V
125
(continued)
28
150
1
3