BCP53 Fairchild Semiconductor, BCP53 Datasheet
BCP53
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BCP53 Summary of contents
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... Symbol Characteristic P Total Device Dissipation D Derate above 25 C Thermal Resistance, Junction to Ambient R JA 1997 Fairchild Semiconductor Corporation 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted Value Units 80 V 100 V 5.0 V 1.2 A -55 to +150 C Max Units BCP53 1 mW/ C 83.3 C/W ...
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Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown (BR)CEO Voltage V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Collector-Cutoff Current CBO I Emitter-Cutoff Current EBO ON CHARACTERISTICS h DC Current Gain FE Collector-Emitter Saturation Voltage V ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ FAST FASTr™ GTO™ ...