BST51,115 NXP Semiconductors, BST51,115 Datasheet - Page 5

• Manufacturer Part Number: BST51,115
• Description: TRANS NPN 60V 500MA SOT89
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of BST51,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 1.3V @ 500µA, 500mA
• Current - Collector Cutoff (max): 50nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 2000 @ 500mA, 10V
• Power - Max: 1.3W
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 80 V
• Maximum Dc Collector Current: 1 A
• Maximum Collector Cut-off Current: 0.05 uA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933644260115; BST51 T/R; BST51 T/R

ndbook, full pagewidth
Philips Semiconductors
2004 Dec 09
handbook, full pagewidth
NPN Darlington transistors
V
V
R1 = 56 ; R2 = 10 k ; R
V
Oscilloscope: input impedance Z
CE
i
BB
= 10 V; T = 200 s; t
5000
h FE
4000
3000
2000
1000
= 10 V.
= 1.8 V; V
10
0
1
CC
= 10.7 V.
p
= 6 s; t
B
= 10 k ; R
i
r
= 50 .
= t
oscilloscope
f
C
3 ns.
= 18 .
1
V i
Fig.2 DC current gain; typical values.
Fig.3 Test circuit for switching times.
(probe)
450
R1
R2
R B
V BB
5
10
R C
V CC
DUT
V o
MLB826
(probe)
450
oscilloscope
BST50; BST51; BST52
10
2
I C (mA)
Product specification
MGD838
10
3