2N1893 STMicroelectronics, 2N1893 Datasheet
2N1893
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2N1893 Summary of contents
Page 1
... GENERAL PURPOSE HIGH VOLTAGE DEVICE DESCRIPTION The 2N1893 is a Silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for use in high-performance amplifier, oscillator and switching circuits. It provides greater voltage swings in oscillator and amplifier circuits and more protection in inductive switching circuits due to its 120 V collector-to-base voltage rating ...
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... THERMAL DATA R Thermal Resistance Junction-Case thj-case R Thermal Resistance Junction-Ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CBO Current ( Emitter Cut-off Current EBO ( Collector-Base (BR)CBO Breakdown Voltage ( Collector-Emitter (BR)CER Breakdown Voltage ( Collector-Emitter (BR)CEO Breakdown Voltage ( Emitter-Base (BR)EBO Breakdown Voltage ( Collector-Emitter CE(sat) ...
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... DC Current Gain DC Current Gain 2N1893 3/5 ...
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... DIM. MIN 4/5 TO-39 MECHANICAL DATA mm TYP. MAX. 0.49 6.6 8.5 9.4 1.2 0 (typ inch MIN. TYP. MAX. 0.500 0.019 0.260 0.334 0.370 0.200 0.047 0.035 A P008B ...
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