2N5550G ON Semiconductor, 2N5550G Datasheet

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2N5550G

Manufacturer Part Number
2N5550G
Description
TRANS NPN GP SS 0.6A 140V TO92
Manufacturer
ON Semiconductor
Type
Amplifierr
Datasheets

Specifications of 2N5550G

Transistor Type
NPN
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
140V
Vce Saturation (max) @ Ib, Ic
250mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 10mA, 5V
Power - Max
625mW
Frequency - Transition
300MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
140 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.6 A
Maximum Dc Collector Current
0.6 A
Power Dissipation
625 mW
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
60 at 1 mA at 5 V
Minimum Operating Temperature
- 55 C
Current, Collector
600 mA
Current, Gain
20
Frequency
300 MHz
Package Type
TO-92
Polarity
NPN
Primary Type
Si
Resistance, Thermal, Junction To Case
83.3 °C/W
Voltage, Breakdown, Collector To Emitter
140 V
Voltage, Collector To Base
160 V
Voltage, Collector To Emitter
140 V
Voltage, Collector To Emitter, Saturation
0.25 V
Voltage, Emitter To Base
6 V
Number Of Elements
1
Collector-emitter Voltage
140V
Collector-base Voltage
160V
Emitter-base Voltage
6V
Collector Current (dc) (max)
600mA
Dc Current Gain (min)
60
Frequency (max)
300MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2N5550GOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N5550G
Manufacturer:
ON
Quantity:
20 184
Part Number:
2N5550G
Manufacturer:
ON Semiconductor
Quantity:
10
2N5550, 2N5551
Amplifier Transistors
NPN Silicon
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 5
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation @ T
Derate above 25°C
Total Device Dissipation @ T
Derate above 25°C
Operating and Storage Junction
Temperature Range
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
These are Pb−Free Devices*
Characteristic
Rating
A
C
Preferred Device
= 25°C
= 25°C
2N5550
2N5551
2N5550
2N5551
Symbol
Symbol
T
V
V
V
R
R
J
P
P
, T
CEO
CBO
EBO
I
qJA
qJC
C
D
D
stg
−55 to +150
Value
Max
83.3
140
160
160
180
600
625
200
6.0
5.0
1.5
12
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
°C
W
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
CASE 29
STYLE 1
TO−92
(Note: Microdot may be in either location)
ORDERING INFORMATION
x
A
Y
WW = Work Week
G
STRAIGHT LEAD
BASE
MARKING DIAGRAM
BULK PACK
http://onsemi.com
2
1 2
= 0 or 1
= Assembly Location
= Year
= Pb−Free Package
3
COLLECTOR
AYWW G
EMITTER
555x
2N
G
Publication Order Number:
3
1
TAPE & REEL
AMMO PACK
BENT LEAD
1
2
3
2N5550/D

Related parts for 2N5550G

2N5550G Summary of contents

Page 1

... Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 March, 2007 − ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 1.0 mAdc Collector−Base Breakdown Voltage = 100 mAdc Emitter−Base Breakdown Voltage = 10 mAdc ...

Page 3

T = 125°C J 200 25°C 100 −55 ° 7.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 0.9 0 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 ...

Page 4

V 10 −8 100 0. INPUT PULSE 5.1 k ≤ ...

Page 5

... ORDERING INFORMATION Device 2N5550G 2N5550RLRPG 2N5551G 2N5551RL1G 2N5551RLRAG 2N5551RLRPG 2N55551ZL1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 2N5550, 2N5551 Package TO−92 (Pb−Free) TO−92 (Pb−Free) TO−92 (Pb−Free) TO− ...

Page 6

... SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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