MMBT489LT1G ON Semiconductor, MMBT489LT1G Datasheet - Page 2

• Manufacturer Part Number: MMBT489LT1G
• Description: TRANS GP SS NPN GP 30V 1A SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBT489LT1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 200mV @ 100mA, 1A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 500mA, 5V
• Power - Max: 310mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 1 A
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 310 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 300 at 50 mA at 5 V
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MMBT489LT1GOS

3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector−Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current
Collector−Emitter Cutoff Current
Emitter Cutoff Current
DC Current Gain (Note 3)
Collector −Emitter Saturation Voltage (Note 3)
Base −Emitter Saturation Voltage (Note 3)
Base −Emitter Turn−on Voltage (Note 3)
Cutoff Frequency
Output Capacitance
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
(I
(I
(I
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(f = 1.0 MHz)
0
C
C
E
C
C
C
C
C
C
C
C
C
CB
CES
EB
0.001
= 0.1 mAdc, I
= 10 mAdc, I
= 0.1 mAdc, I
= 50 mA, V
= 0.5 A, V
= 1.0 A, V
= 1.0 A, I
= 0.5 A, I
= 0.1 A, I
= 1.0 A, I
= 1.0 mA, V
= 100 mA, V
I
C
= 30 Vdc, I
= 4.0 Vdc)
= 30 Vdc)
= 100 mA
B
B
B
B
I
C
CE
CE
= 100 mA)
= 50 mA)
= 1.0 mA)
= 0.1 A)
CE
= 500 mA
CE
CE
B
E
= 5.0 V)
= 5.0 V)
C
E
Figure 1. V
= 5.0 V)
= 0)
= 0)
= 2.0 V)
= 0)
= 0)
= 5.0 V, f = 100 MHz
I
C
= 1 A
0.01
Characteristic
I
b
CE
(A)
versus I
I
C
(T
= 2 A
A
= 25°C unless otherwise noted)
b
0.1
http://onsemi.com
0.2
2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.001
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
I
CE(sat)
BE(sat)
C
I
BE(on)
h
CBO
CES
EBO
f
obo
FE
T
Figure 2. V
0.01
I
Min
300
300
200
100
5.0
c
CE
30
50
−
−
−
−
−
−
−
−
−
(A)
versus I
0.1
I
c
0.200
0.125
0.075
/I
Max
900
0.1
0.1
0.1
1.1
1.1
15
b
−
−
−
−
−
−
c
I
= 10
c
/I
b
= 100
mAdc
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
1
pF
V
V
V
2