PDTA123JT,215 NXP Semiconductors, PDTA123JT,215 Datasheet - Page 5

• Manufacturer Part Number: PDTA123JT,215
• Description: TRANS PNP 50V 100MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of PDTA123JT,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 5V
• Vce Saturation (max) @ Ib, Ic: 100mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: PNP
• Typical Input Resistor: 2.2 KOhm
• Typical Resistor Ratio: 0.047
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934055395215; PDTA123JT T/R; PDTA123JT T/R

NXP Semiconductors
CHARACTERISTICS
T
2004 Aug 02
I
I
I
h
V
V
V
R1
C
SYMBOL
R2
------- -
R1
amb
CBO
CEO
EBO
FE
CEsat
i(off)
i(on)
PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩ
c
= 25 °C unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
PARAMETER
V
V
V
V
V
I
I
I
C
C
C
E
CB
CE
CE
EB
CE
= i
= −5 mA; I
= −100 μA; V
= −5 mA; V
= −5 V; I
= −50 V; I
= −30 V; I
= −30 V; I
= −5 V; I
e
= 0; V
5
CONDITIONS
CB
C
B
C
CE
E
B
B
= −0.25 mA
= 0
= −10 mA
= −10 V; f = 1 MHz −
CE
= 0
= 0
= 0; T
= −0.3 V
= −5 V
j
= 150 °C
−
−
−
−
100
−
−
−1.1
1.54
17
MIN.
PDTA123J series
−
−
−
−
−
−
−0.6
−0.75
2.2
21
−
TYP.
Product data sheet
−100
−1
−50
−180
−
−100
−0.5
−
2.86
26
3
MAX.
nA
μA
μA
μA
mV
V
V
kΩ
pF
UNIT