PDTA123YU,115 NXP Semiconductors, PDTA123YU,115 Datasheet - Page 13

• Manufacturer Part Number: PDTA123YU,115
• Description: TRANS PNP W/RES 50V SOT-323
• Manufacturer: NXP Semiconductors

Specifications of PDTA123YU,115

• Package / Case: SC-70, SOT-323
• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 35 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: PNP
• Typical Input Resistor: 2.2 KOhm
• Typical Resistor Ratio: 0.222
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058792115; PDTA123YU T/R; PDTA123YU T/R

NXP Semiconductors
Fig 11. Package outline SOT23 (TO-236AB)
PDTA123Y_SER_4
Product data sheet
Plastic surface-mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT23
1.1
0.9
A
max.
A
0.1
1
1
0.48
0.38
b
p
IEC
e 1
0.15
0.09
c
D
e
3.0
2.8
D
b p
3
TO-236AB
JEDEC
1.4
1.2
E
REFERENCES
Rev. 04 — 3 September 2009
0
2
1.9
e
PNP resistor-equipped transistors; R1 = 2.2 k , R2 = 10 k
w
0.95
B
M
e
1
JEITA
scale
B
1
2.5
2.1
H
E
0.45
0.15
L
p
A
2 mm
A 1
0.55
0.45
Q
H E
0.2
E
PDTA123Y series
v
detail X
PROJECTION
0.1
EUROPEAN
w
L p
A
Q
c
© NXP B.V. 2009. All rights reserved.
X
v
ISSUE DATE
M
04-11-04
06-03-16
A
SOT23
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