PDTC114EM,315 NXP Semiconductors, PDTC114EM,315 Datasheet - Page 4

TRANS PNP 50V 100MA SOT883

PDTC114EM,315

Manufacturer Part Number
PDTC114EM,315
Description
TRANS PNP 50V 100MA SOT883
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PDTC114EM,315

Package / Case
SC-101, SOT-883
Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
150mV @ 500µA, 10mA
Current - Collector Cutoff (max)
1µA
Power - Max
250mW
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
NPN
Typical Input Resistor
10 KOhms
Typical Resistor Ratio
1
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Power Dissipation
250 mW
Maximum Operating Temperature
+ 150 C
Emitter- Base Voltage Vebo
10 V
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934057170315
PDTC114EM T/R
PDTC114EM T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PDTC114EM,315
Manufacturer:
NXP Semiconductors
Quantity:
16 000
NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
THERMAL CHARACTERISTICS
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
2004 Aug 05
V
V
V
V
I
I
P
T
T
T
R
O
CM
SYMBOL
SYMBOL
stg
j
amb
CBO
CEO
EBO
I
tot
NPN resistor-equipped transistor;
R1 = 10 kΩ, R2 = 10 kΩ
th j-a
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient
positive
negative
SOT54
SOT23
SOT346
SOT323
SOT416
SOT490
SOT883
SOT54
SOT23
SOT346
SOT323
SOT416
SOT490
SOT883
PARAMETER
PARAMETER
open emitter
open base
open collector
T
note 1
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
amb
≤ 25 °C
4
CONDITIONS
in free air
note 1
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
CONDITIONS
−65
−65
MIN.
PDTC114E series
VALUE
250
500
500
625
833
500
500
50
50
10
+40
−10
100
100
500
250
250
200
150
250
250
+150
150
+150
MAX.
Product data sheet
UNIT
K/W
K/W
K/W
K/W
K/W
K/W
K/W
V
V
V
V
V
mA
mA
mW
mW
mW
mW
mW
mW
mW
°C
°C
°C
UNIT

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