BCR 521 E6327 Infineon Technologies, BCR 521 E6327 Datasheet

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BCR 521 E6327

Manufacturer Part Number
BCR 521 E6327
Description
TRANSISTOR NPN DGTL AF SOT-23
Manufacturer
Infineon Technologies
Datasheet

Specifications of BCR 521 E6327

Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
1K
Resistor - Emitter Base (r2) (ohms)
1K
Dc Current Gain (hfe) (min) @ Ic, Vce
20 @ 50mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 2.5mA, 50mA
Frequency - Transition
100MHz
Power - Max
330mW
Mounting Type
Surface Mount
Configuration
Single
Transistor Polarity
NPN
Typical Input Resistor
1 KOhms
Typical Resistor Ratio
1
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
500 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BCR521E6327XT
SP000010845
NPN Silicon Digital Transistor
Type
BCR521
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Input forward voltage
Input reverse voltage
Collector current
Total power dissipation-
T
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1
2
Pb-containing package may be available upon special request
For calculation of R
S
Built in bias resistor (R
Pb-free (RoHS compliant) package
Qualified according AEC Q101
B
1
R
1
79 °C
R
2
C
3
E
EHA07184
2
thJA
please refer to Application Note Thermal Resistance
1
2)
= 1 k , R
Marking
XVs
2
= 1 k )
1)
1=B
1
Pin Configuration
Symbol
V
V
V
V
I
P
T
T
Symbol
R
C
j
stg
CEO
CBO
i(fwd)
i(rev)
tot
thJS
2=E
3=C
3
-65 ... 150
Value
Value
500
330
150
50
50
12
10
215
Package
SOT23
2007-07-24
BCR521
1
Unit
V
mA
mW
°C
Unit
K/W
2

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BCR 521 E6327 Summary of contents

Page 1

NPN Silicon Digital Transistor Built in bias resistor ( Pb-free (RoHS compliant) package Qualified according AEC Q101 EHA07184 Type BCR521 Maximum Ratings Parameter Collector-emitter ...

Page 2

Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage I = 100 µ Collector-base breakdown voltage µ Collector-base cutoff current ...

Page 3

DC current gain (common emitter configuration -40 ° -25 °C 25 °C 85 °C 125 ° ...

Page 4

Total power dissipation P 400 mW 300 250 200 150 100 Permissible Pulse Load totmax totDC 0.005 0.01 0.02 ...

Page 5

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT23 2.9 ±0 +0.1 0.4 -0.05 C 0.95 1.9 0.25 B ...

Page 6

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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