DTA114YM3T5G ON Semiconductor, DTA114YM3T5G Datasheet - Page 2

• Manufacturer Part Number: DTA114YM3T5G
• Description: TRANS PNP 50V 10/47K SOT-723
• Manufacturer: ON Semiconductor

Specifications of DTA114YM3T5G

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 260mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

*Available upon request
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0
THERMAL CHARACTERISTICS
ORDERING INFORMATION, DEVICE MARKING AND RESISTOR VALUES
Specification Brochure, BRD8011/D.
DTA114EM3T5G
DTA124EM3T5G*
DTA144EM3T5G
DTA114YM3T5G
DTA114TM3T5G
DTA143TM3T5G*
DTA123EM3T5G*
DTA143EM3T5G*
DTA143ZM3T5G*
DTA124XM3T5G
DTA123JM3T5G*
DTA115EM3T5G
DTA144WM3T5G*
Total Device Dissipation,
Thermal Resistance, Junction to Ambient (Note 1.)
Total Device Dissipation,
Thermal Resistance, Junction to Ambient (Note 2.)
Junction and Storage Temperature Range
FR−4 Board (Note 1.) @ T
Derate above 25 C
FR−4 Board (Note 2.) @ T
Derate above 25 C
Device
1.0 Inch Pad
A
A
= 25 C
= 25 C
Marking
6M
6A
6B
6C
6D
6E
6F
6H
6K
6N
6P
6J
6L
Characteristic
DTA114EM3T5G Series
R1 (K)
100
4.7
2.2
4.7
4.7
2.2
10
22
47
10
10
22
47
http://onsemi.com
2
R2 (K)
100
2.2
4.7
10
22
47
47
47
47
47
22
(Pb−Free)
SOT−723
Package
Symbol
T
R
R
J
P
P
, T
qJA
qJA
D
D
stg
−55 to +150
Max
260
480
600
205
2.0
4.8
8000/Tape & Reel
Shipping
mW/ C
mW/ C
†
Unit
mW
mW
C/W
C/W
C