FJN4303RBU Fairchild Semiconductor, FJN4303RBU Datasheet
FJN4303RBU
Manufacturer Part Number
FJN4303RBU
Description
TRANSISTOR PNP 50V 100MA TO-92
Manufacturer
Fairchild Semiconductor
Datasheet
1.FJN4303RTA.pdf
(4 pages)
Specifications of FJN4303RBU
Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
22K
Resistor - Emitter Base (r2) (ohms)
22K
Dc Current Gain (hfe) (min) @ Ic, Vce
56 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Frequency - Transition
200MHz
Power - Max
300mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2002 Fairchild Semiconductor Corporation
Switching Application
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R
• Complement to FJN3303R
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
V
V
V
I
P
T
T
BV
BV
I
h
V
f
C
V
V
R
R
C
CBO
T
Symbol
Symbol
FE
J
STG
CBO
CEO
EBO
C
CE
I
I
ob
1
1
(off)
(on)
/R
CBO
CEO
(sat)
2
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio
1
Parameter
=22K , R
Parameter
(Bias Resistor Built In)
2
=22K )
T
a
=25 C unless otherwise noted
T
a
=25 C unless otherwise noted
FJN4303R
I
I
V
V
I
V
V
f=1.0MHz
V
V
C
C
C
-55 ~ 150
CB
CE
CE
CB
CE
CE
= -10 A, I
= -100 A, I
= -10mA, I
Value
-100
300
150
-50
-50
-10
= -40V, I
= -5V, I
= -10V, I
= -10V, I
= -5V, I
= -0.3V, I
Test Condition
C
C
E
E
C
E
= -5mA
B
= -100 A
=0
B
C
=0
= -0.5mA
=0
= -5mA
=0
= -5mA
Units
mW
mA
V
V
V
C
C
1. Emitter 2. Collector 3. Base
1
Min.
-0.5
-50
0.9
-50
56
15
Equivalent Circuit
B
Typ.
200
5.5
22
1
TO-92
R1
Max.
R2
-0.1
-0.3
-3.0
1.1
29
Rev. A, July 2002
Units
MHz
K
pF
V
V
V
V
V
C
E
A
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FJN4303RBU Summary of contents
Page 1
... C Output Capacitance ob V (off) Input Off Voltage I V (on) Input On Voltage I R Input Resistor Resistor Ratio 1 2 ©2002 Fairchild Semiconductor Corporation FJN4303R (Bias Resistor Built In) =22K ) 2 T =25 C unless otherwise noted a Value -50 -50 -10 -100 300 150 -55 ~ 150 T =25 C unless otherwise noted a Test Condition ...
Page 2
... Typical Characteristics -1000 -100 -10 -1 -10 I [mA], COLLECTOR CURRENT C Figure 1. DC current Gain -1000 -100 -10 -0.0 -0.4 -0.8 -1.2 V (off)[V], INPUT OFF VOLTAGE I Figure 3. Input Off Voltage ©2002 Fairchild Semiconductor Corporation -100 22K 22K 2 -10 -1 -100 -1000 -0.1 350 22K 1 300 R = 22K ...
Page 3
... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Dimensions in Millimeters Rev. A, July 2002 Rev. A, July 2002 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DOME™ HiSeC™ ...