MMUN2216LT1 ON Semiconductor, MMUN2216LT1 Datasheet - Page 4

• Manufacturer Part Number: MMUN2216LT1
• Description: TRANS BRT NPN 100MA 50V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMUN2216LT1

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 246mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MMUN2216LT1OSCT

0.001
1000
0.01
250
200
150
100
100
100
0.1
50
10
10
0
1
−50
1
0
75°C
Figure 5. Output Current vs. Input Voltage
1
T
2
A
I
R
C
, AMBIENT TEMPERATURE (5°C)
V
Figure 3. DC Current Gain
25°C
0
, COLLECTOR CURRENT (mA)
qJA
Figure 1. Derating Curve
in
, INPUT VOLTAGE (VOLTS)
T
3
= 625°C/W
A
TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2211LT1G
= −25°C
4
50
10
5
6
7
100
V
CE
V
T
8
O
= 10 V
A
= 5 V
= 75°C
http://onsemi.com
−25°C
25°C
9
150
100
10
4
0.001
0.01
0.1
0.1
10
1
4
2
1
0
3
1
0
0
0
Figure 6. Input Voltage vs. Output Current
V
I
O
C
/I
= 0.2 V
B
V
= 10
R
10
10
, REVERSE BIAS VOLTAGE (VOLTS)
Figure 4. Output Capcitance
I
I
C
C
20
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
Figure 2. V
20
20
T
40
CE(sat)
A
= −25°C
75°C
30
30
vs. I
C
60
f = 1 MHz
l
T
E
40
40
A
T
= 0 A
A
= 25°C
25°C
= −25°C
25°C
75°C
50
50
80