DTA143EET1 ON Semiconductor, DTA143EET1 Datasheet - Page 10

• Manufacturer Part Number: DTA143EET1
• Description: TRANS PNP 50V 4.7/4.7K SC75-3
• Manufacturer: ON Semiconductor

Specifications of DTA143EET1

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 4.7K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 15 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-75-3, SOT-416
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

0.1
0.001
10
0.01
1
0.1
4.5
3.5
2.5
1.5
0.5
4
3
2
1
0
0
1
Figure 27. Input Voltage versus Output Current
0
0
V
O
I
C
= 0.2 V
2
/I
B
= 10
10
4
Figure 25. Output Capacitance
V
Figure 23. V
I
6
C
R
20
, COLLECTOR CURRENT (mA)
, REVERSE BIAS VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
75°C
8
20
10
TYPICAL ELECTRICAL CHARACTERISTICS − DTA114YET1
15 20
CE(sat)
40
T
30
A
= −25°C
versus I
25 30
75°C
T
A
= −25°C
25°C
f = 1 MHz
l
T
60
E
40
A
35 40
C
= 0 V
= 25°C
DTA114EET1 Series
http://onsemi.com
25°C
45 50
50
80
10
100
180
160
140
120
100
10
Figure 28. Inexpensive, Unregulated Current Source
80
60
40
20
1
0
1
0
Figure 26. Output Current versus Input Voltage
V
CE
2
= 10 V
4
Typical Application
2
6
for PNP BRTs
Figure 24. DC Current Gain
I
C
V
8
, COLLECTOR CURRENT (mA)
in
, INPUT VOLTAGE (VOLTS)
10
T
4
A
15 20 40 50 60 70 80 90
= 75°C
−25°C
−25°C
6
25°C
V
O
= 5 V
T
A
+12 V
= 75°C
8
25°C
LOAD
10
100