STC04IE170HV STMicroelectronics, STC04IE170HV Datasheet - Page 3

• Manufacturer Part Number: STC04IE170HV
• Description: TRANS ESBT 1700V 4A TO247-4LHV
• Manufacturer: STMicroelectronics

Specifications of STC04IE170HV

• Transistor Type: NPN - Emitter Switched Bipolar
• Applications: Gate Driver
• Voltage - Rated: 1700V (1.7kV)
• Current Rating: 4A
• Mounting Type: Through Hole
• Package / Case: TO-247-4 Modified
• Transistor Polarity: NPN
• Power Dissipation Pd: 178W
• Dc Collector Current: 4A
• Dc Current Gain Hfe: 11
• Transistor Case Style: TO-247
• No. Of Pins: 4
• Svhc: No SVHC (15-Dec-2010)
• Rohs Compliant: Yes
• For Use With: 497-6417 - BOARD EVAL BASED ON STC04IE170497-5863 - EVAL BOARD 2W 3PH SMPS BRKR ESBT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6201-5

2
Electrical characteristics
(T
Table 4.
1. Pulsed duration = 300 µs, duty cycle ≤ 1.5%.
Symbol
V
V
V
V
Q
I
I
I
I
V
case
h
BS(OS)
SB(OS)
GS(OS)
V
CS(SS)
CS(dyn)
CS(dyn)
CS(ON)
BS(ON)
GS(tot)
FE
GS(th)
C
CSW
t
t
t
t
iss
s
s
f
f
(1)
= 25 °C unless otherwise specified)
Collector cut-off current
(V
Base cut-off current
(I
Source cut-off current
(I
Gate-source leakage
current (V
Collector-source ON
voltage
DC current gain
Base-source ON
voltage
Gate threshold voltage
Input capacitance
(V
Gate-source charge
(V
Inductive load
Storage time
Fall time
Inductive load
Storage time
Fall time
Collector-source
dynamic voltage
(0.5 µs)
Collector-source
dynamic voltage (1 µs)
Maximum collector-
source voltage at turn-
off without snubber
C
C
Electrical characteristics
BS
GS
CB
=0, V
= 0, V
= V
= V
= 0)
Parameter
GS
GS
CB
GS
BS
= 0)
= 0)
= 0)
= 0)
= 0)
Doc ID 12676 Rev 3
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
I
V
V
I
V
V
I
R
V
V
I
R
R
C
C
B
B
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
CS
BS
SB
CS
CS
BS
CS
Clamp
Clamp
CC
CC
G
G
G
= 0.3 A
= 0.3 A
= 2 A
= 2 A
= 47 Ω
= 47 Ω
= 47 Ω
= 1700 V
= 30 V
= 17 V
= 10 V I
= 1 V V
= 1 V V
= 10 V I
= V
= 25 V
= 10 V
= ± 17 V
= 10 V I
= 10 V I
= 10 V
=10 V
= V
= 10 V
= V
= 10 V
= 1360 V
= 1360 V
GS
Clamp
Clamp
Test conditions
C
GS
C
I
C
GS
h
C
B
f = 1 MHz
= 400 V
= 400 V
= 1.5 A I
= 1.5 A I
FE
= 4 A
= 250 µA
= 4 A
= 10 V I
= 10 V I
I
I
Bpeak
Bpeak
I
t
= 5
I
C
t
peak
C
peak
= 1.5 A
= 1.5 A
t
R
t
p
= 3 A (2I
= 3 A (2I
I
= 500 ns
R
p
I
I
B
= 500 ns
B
B
B
I
B
G
= 4 µs
B
C
G
= 4 µs
= 0.2 A
I
= 0.15 A
= 0.15 A
C
= 0.8 A
= 0.4 A
C
= 47 Ω
= 0.8 A
= 1.5 A
= 47 Ω
= 4 A
= 4 A
C
C
)
)
1700
Min.
4
7
2
Typ.
5.36
4.32
510
770
410
0.7
0.6
5.5
1.3
0.9
3.9
11
10
10
3
Max.
100
100
100
1.5
1.4
1.5
1.1
10
4
Unit
µA
µA
µA
nA
nC
pF
ns
ns
ns
ns
V
V
V
V
V
V
V
V
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