LMN200B02-7 Diodes Inc, LMN200B02-7 Datasheet - Page 3

• Manufacturer Part Number: LMN200B02-7
• Description: MCU LOAD SWITCH 200MA SOT-363
• Manufacturer: Diodes Inc

Specifications of LMN200B02-7

• Transistor Type: PNP Pre-Biased, N-Channel Pre-Biased
• Applications: Load Switch
• Voltage - Rated: 50V PNP, 60V N-Channel
• Current Rating: 200mA PNP, 115mA N-Channel
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: LMN200B02DITR

Electrical Characteristics: Pre-Biased PNP Transistor (Q1)
OFF CHARACTERISTICS
Collector-Base Cut Off Current
Collector-Emitter Cut Off Current
Emitter-Base Cut Off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Input Off Voltage
Output Voltage
Ouput Current (leakage current same as I
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage
Equivalent On-Resistance*
DC Current Gain
Input On Voltage
Output Voltage (equivalent to V
Input Current
Base-Emitter Turn-on Voltage
Base-Emitter Saturation Voltage
Input Resistor (Base), +/- 30%
Pull-up Resistor (Base to Vcc supply), +/- 30%
Resistor Ratio (Input Resistor/Pull-up
resistor) +/- 20%
SMALL SIGNAL CHARACTERISTICS
Transition Frequency (Gain Bandwidth Product)
Collector Capacitance, (C
* Pulse Test: Pulse width, tp<300 μS, Duty Cycle, d<=0.02
DS30658 Rev. 7 - 2
Characteristic
cbo
-Output Capacitance)
CE(SAT)
or V
CEO
O(ON)
)
)
V
V
V
R
Symbol
V
V
V
I
R1/R2
(BR)CBO
(BR)CEO
V
O(OFF)
CE(SAT)
CE(SAT)
BE(SAT)
BE(ON)
I
I
I
V
V
I(OFF)
h
CBO
CEO
EBO
R2
R1
C
I(ON)
f
OH
I
FE
OL
T
i
C
www.diodes.com
-2.45
Min
-4.9
-50
-50
60
60
60
60
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
3 of 9
-0.065
-0.55
-1.13
0.47
Typ
-0.5
-0.7
-3.2
-4.6
150
215
245
250
200
10
21
20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-9
-0.15
-0.25
-0.25
-0.15
Max
-100
-500
-500
-0.3
-0.2
-0.2
-0.3
-1.3
-3.6
-5.5
-28
1.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-1
@T
A
= 25°C unless otherwise specified
MHz
Unit
mA
mA
KΩ
KΩ
nA
nA
nA
pF
⎯
⎯
⎯
⎯
⎯
V
V
V
V
V
V
V
V
V
V
Ω
V
V
V
V
V
V
V
I
I
V
V
R
V
I
I
I
I
I
I
I
V
V
V
V
V
V
I
V
V
I
I
V
f = 100MHz
V
f = 1MHz
C
C
C
C
C
C
C
C
C
o
C
C
CB
CE
EB
CE
CC
CC
CE
CE
CE
CE
O
CC
I
CE
CE
CB
L
/I
= -10 uA, I
= -100mA, I
= -200mA, I
= -200mA, I
= -2 mA, I
= -10 mA, I
= -50mA, I
= -20mA, I
= -200mA, I
= -5V
= -50mA, I
= -80mA, I
I
= 1K
= -0.3V, I
= -50mA /-2.5mA
= -5V, I
= -50V, I
= -5V, I
= -5V, I
= -5V, I
= -5V, I
= -5V, I
= -5V, I
= -10V, I
= -10V, I
= -5V, V
= -50V, V
= -5V,
= -50V, I
Test Condition
© Diodes Incorporated
V
C
C
C
C
C
C
C
B
⎯
⎯
⎯
C
B
E
B
E
B
B
B
B
E
E
B
= 0
B
= -100uA
= -20 mA
= -50 mA
= -100 mA
= -200 mA
= 200mA
= 0
I
B
B
B
B
= -2.5V,
= 0
= -0.05V,
= -2 mA
= -5mA
= -1mA
= -5mA
= -8mA
= 0
= 0
= -5mA,
= 0A,
= 0V
= -10mA
= -10mA
LMN200B02
= -0.5 mA
= -10mA
= -20mA