BCV62B,215 NXP Semiconductors, BCV62B,215 Datasheet - Page 8

• Manufacturer Part Number: BCV62B,215
• Description: TRANS PNP 30V 100MA DUAL SOT143B
• Manufacturer: NXP Semiconductors

Specifications of BCV62B,215

• Dc Collector/base Gain Hfe Min: 220
• Minimum Operating Temperature: - 65 C
• Configuration: Dual
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Package / Case: SOT-143
• Collector- Emitter Voltage Vceo Max: - 30 V
• Emitter- Base Voltage Vebo: - 6 V
• Continuous Collector Current: - 100 mA
• Maximum Dc Collector Current: - 200 mA
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933792140215::BCV62B T/R::BCV62B T/R

NXP Semiconductors
8. Test information
BCV62
Product data sheet
Fig 13. Maximum collector-emitter voltage as a function of emitter resistor
Fig 14. Test circuit current matching
Fig 15. Current mirror with emitter resistors
−V
CE1max
(V)
−30
−20
−10
I
(see
C1
10
0
/I
−1
E2
Figure
= 1.3
All information provided in this document is subject to legal disclaimers.
15)
Rev. 4 — 26 July 2010
−V CE1
−V CE1
1
I C1
I C1
A
A
TR1
TR1
2
3
2
3
R E
PNP general-purpose double transistors
TR2
TR2
1
4
1
4
R E
006aaa841
006aac001
10
constant
constant
I E2 =
50 mA
I E2 =
R
E
10 mA
(Ω)
5 mA
© NXP B.V. 2010. All rights reserved.
mbk083
1 mA
I
E2
BCV62
=
10
2
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