Z0109MNT1G ON Semiconductor, Z0109MNT1G Datasheet

Z0109MNT1G

Manufacturer Part Number

Z0109MNT1G

Description

IC TRIAC SENS GATE BIDIR SOT-223

Manufacturer

ON Semiconductor

Datasheet

1.Z0109MNT1G.pdf (8 pages)

Specifications of Z0109MNT1G

Triac Type

Logic - Sensitive Gate

Mounting Type

Surface Mount

Configuration

Single

Current - Hold (ih) (max)

10mA

Voltage - Off State

600V

Current - Gate Trigger (igt) (max)

10mA

Current - Non Rep. Surge 50, 60hz (itsm)

8A @ 60Hz

Current - On State (it (rms)) (max)

Voltage - Gate Trigger (vgt) (max)

1.3V

Package / Case

TO-261-4, TO-261AA

Current - On State (it (rms) (max)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

Z0109MNT1G
Z0109MNT1GOSTR

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Z0103MN, Z0107MN,

Z0109MN

Sensitive Gate Triac Series

Silicon Bidirectional Thyristors

other light industrial or consumer applications. Supplied in surface

mount package for use in automated manufacturing.

Features

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. V

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

June, 2009 − Rev. 3

Peak Repetitive Off−State Voltage (Note 1)

(Sine Wave, 50 to 60 Hz, Gate Open,

On−State Current RMS (T

(Full Sine Wave 50 to 60 Hz)

Peak Non−repetitive Surge Current (One Full

Cycle Sine Wave, 60 Hz, T

Circuit Fusing Considerations

(Pulse Width = 8.3 ms)

Average Gate Power (T

Peak Gate Current (t v 20 ms, T

Operating Junction Temperature Range

Storage Temperature Range

Thermal Resistance, Junction−to−Ambient PCB

Mounted per Figure 1

Thermal Resistance, Junction−to−Tab Meas-

ured on MT2 Tab Adjacent to Epoxy

Maximum Device Temperature for

Soldering Purposes for 10 Secs Maximum

Designed for use in solid state relays, MPU interface, TTL logic and

Sensitive Gate Trigger Current in Four Trigger Modes

Blocking Voltage to 600 V

Glass Passivated Surface for Reliability and Uniformity

Surface Mount Package

These are Pb−Free Devices

Semiconductor Components Industries, LLC, 2009

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

= −40 to +125 C)

DRM

and V

RRM

Characteristic

for all types can be applied on a continuous basis. Blocking

Rating

= 80 C, t v 8.3 ms)

= 25 C unless otherwise noted)

= 80 C)

= 25 C)

= +125 C)

Symbol

T(RMS)

G(AV)

DRM,

TSM

RRM

qJA

qJT

stg

−40 to

Value

+125

+150

Max

600

156

260

1.0

8.0

0.4

1.0

Unit

C/W

†For information on tape and reel specifications,

Z0103MNT1G

Z0107MNT1G

Z0109MNT1G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Device

(Note: Microdot may be in either location)

MT2

ORDERING INFORMATION

10XMN = Device Code

1.0 AMPERE RMS

http://onsemi.com

PIN ASSIGNMENT

CASE 318E

STYLE 11

SOT−223

600 VOLTS

= Assembly Location

= Year

= Work Week

x = 3, 7, 9

= Pb−Free Package

(Pb−Free)

SOT−223

Package

TRIAC

Publication Order Number:

Main Terminal 1

Main Terminal 2

Gate

1000/Tape & Reel

MARKING

DIAGRAM

10XMN G

Shipping

MT1

AYW

Z0103MN/D

†

Related parts for Z0109MNT1G

Z0109MNT1G Summary of contents

Page 1

... Max Unit Z0103MNT1G R 156 C/W qJA Z0107MNT1G R 25 C/W qJT Z0109MNT1G T 260 C L †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com TRIAC 1.0 AMPERE RMS ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Peak Repetitive Blocking Current (V = Rated Gate Open) D DRM RRM ON CHARACTERISTICS Peak On−State Voltage (I = "1.4 A Peak; Pulse Width v 2.0 ms, Duty Cycle v 2.0%) ...

Page 3

... Voltage Current Characteristic of Triacs Symbol Parameter V Peak Repetitive Forward Off State Voltage DRM I Peak Forward Blocking Current DRM V Peak Repetitive Reverse Off State Voltage RRM I Peak Reverse Blocking Current RRM V Maximum On State Voltage TM I Holding Current H Quadrant II I − GT Quadrant III All polarities are referenced to MT1. With in− ...

Page 4

Figure 1. PCB for Thermal Impedance ...

Page 5

INSTANTANEOUS ON‐STATE VOLTAGE (VOLTS) T Figure 2. On-State Characteristics 110 100 180 60 120 50 MINIMUM FOOTPRINT ...

Page 6

CONDUCTION 0.7 ANGLE 0.6 120 0.5 0.4 = 180 0.3 dc 0.2 0 0.1 0.2 0.3 0.4 0 RMS ON‐STATE CURRENT (AMPS) T(RMS) Figure 8. Power Dissipation 200 V RMS ADJUST FOR I ...

Page 7

MAIN TERMINAL #2 POSITIVE 40 30 MAIN TERMINAL #1 POSITIVE 20 10 100 R , GATE - MAIN TERMINAL 1 RESISTANCE (OHMS) G Figure 13. Exponential Static dv/dt versus Gate − Main Terminal 1 Resistance 6.0 5.0 4.0 ...

Page 8

... A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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