BT131W-600,135 NXP Semiconductors, BT131W-600,135 Datasheet - Page 3

• Manufacturer Part Number: BT131W-600,135
• Description: TRIAC 600V 1A SOT223
• Manufacturer: NXP Semiconductors

Specifications of BT131W-600,135

• Package / Case: TO-261-4, TO-261AA
• Triac Type: Logic - Sensitive Gate
• Mounting Type: Surface Mount
• Configuration: Single
• Current - Hold (ih) (max): 5mA
• Voltage - Off State: 600V
• Current - Gate Trigger (igt) (max): 3mA
• Current - Non Rep. Surge 50, 60hz (itsm): 12.5A, 13.8A
• Current - On State (it (rms)) (max): 1A
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Current - On State (it (rms) (max): 1A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 13.8 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 7 mA
• Holding Current (ih Max): 5 mA
• Forward Voltage Drop: 1.5 V @ 1.4 A
• Mounting Style: SMD/SMT
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934055286135; BT131W-600 /T3; BT131W-600 /T3

Philips Semiconductors
January 2004
P tot
Triacs
logic level
(W)
Fig.1. Maximum on-state dissipation, P
on-state current, I
I TSM
0.8
0.6
0.4
0.2
0
(A)
on-state current I
Fig.2. Maximum permissible non-repetitive peak
Fig.3. Maximum permissible non-repetitive peak
1
I TSM
0
(A)
on-state current I
10 2
10 3
14
12
10
6
2
8
4
0
10
1
10 -5
sinusoidal currents, t
sinusoidal currents, f = 50 Hz.
T2- G+ quadrant
10 -4
dI T /dt limit
0.4
T(RMS)
TSM
10
TSM
, versus number of cycles, for
, where
, versus pulse width t
10 -3
I
p
T
0.8
T j initial = 25 C max
= conduction angle.
I T
10 2
20ms.
T j initial = 25 C max
Number of cycles at 50Hz
t p
10 -2
I T(RMS) (A)
T
tot
, versus rms
120
90
60
30
= 180
t p (S)
I TSM
time
p
I TSM
, for
time
1.2
10 -1
T sp (max)
122
125
110
113
119
116
10 3
( C)
3
I T(RMS)
Fig.5. Maximum permissible repetitive rms on-state
(A)
current I
V
Fig.4. Maximum permissible rms current I
0.2
1.2
0.8
0.4
0.6
GT
1
0
2.5
2.0
1.5
0.5
1.6
1.4
1.2
0.8
0.6
0.4
-50
3
1
0
(T
0.01
1
-50
IT(RMS) / A
VGT(25 C)
j
Fig.6. Normalised gate trigger voltage
)/ V
VGT(Tj)
versus solder point temperature T
T(RMS)
currents, f = 50 Hz; T
GT
(25˚C), versus junction temperature T
, versus surge duration, for sinusoidal
0
0
0.1
surge duration / s
Tj / C
50
50
lead
BT131W series
Product specification
1
110˚C.
100
100
sp
T lead ( C)
.
Rev 2.000
T(RMS)
110 C
150
10
,
j
.
150