BTA312X-800E,127 NXP Semiconductors, BTA312X-800E,127 Datasheet - Page 5

• Manufacturer Part Number: BTA312X-800E,127
• Description: TRIAC 800V 12A TO-220F
• Manufacturer: NXP Semiconductors

Specifications of BTA312X-800E,127

• Package / Case: TO-220-3 Full Pack
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 15mA
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 10mA
• Current - Non Rep. Surge 50, 60hz (itsm): 95A, 105A
• Current - On State (it (rms) (max): 12A
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Triac Type: Logic - Sensitive Gate
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 105 A
• On-state Rms Current (it Rms): 12 A
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Gate Trigger Voltage (vgt): 0.4 V
• Gate Trigger Current (igt): 10 mA
• Holding Current (ih Max): 15 mA
• Forward Voltage Drop: 1.3 V
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934060045127::BTA312X-800E::BTA312X-800E

NXP Semiconductors
5. Thermal characteristics
Table 4.
6. Isolation characteristics
Table 5.
T
BTA312X_SER_D_E_1
Product data sheet
Symbol
R
R
Symbol
V
C
h
Fig 6. Transient thermal impedance from junction to heatsink as a function of pulse duration
isol(RMS)
th(j-h)
th(j-a)
isol
= 25 C unless otherwise specified.
Z
(K/W)
(1) Unidirectional (half cycle) without heatsink compound
(2) Unidirectional (half cycle) with heatsink compound
(3) Bidirectional (full cycle) without heatsink compound
(4) Bidirectional (full cycle) with heatsink compound
th(j-h)
10
10
10
10
1
1
2
3
10
5
Thermal characteristics
Isolation limiting values and characteristics
Parameter
RMS isolation voltage from all three terminals to
isolation capacitance
Parameter
thermal resistance from junction to
heatsink
thermal resistance from junction to
ambient
10
4
Conditions
external heatsink; f = 50 Hz to
60 Hz; sinusoidal waveform;
RH
from pin 2 to external heatsink;
f = 1 MHz
10
65 %; clean and dust free
3
Rev. 01 — 16 April 2007
Conditions
full or half cycle; without
heatsink compound; see
Figure 6
full or half cycle; with
heatsink compound; see
Figure 6
in free air
10
2
BTA312X series D and E
(1)
(2)
12 A Three-quadrant triacs high commutation
(3)
(4)
10
Min
-
-
1
Min
-
-
-
Typ
-
10
Typ
-
-
55
1
P
t
t
p
Max
2500
-
© NXP B.V. 2007. All rights reserved.
p
Max
5.5
4.5
-
(s)
003aab672
t
10
Unit
K/W
K/W
K/W
Unit
V
pF
5 of 12