IRFH8330TRPBF International Rectifier, IRFH8330TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRFH8330TRPBF
• Description: MOSFET N-CH 30V 56A 5X6 PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH8330TRPBF

• Input Capacitance (ciss) @ Vds: 1450pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.6 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Power - Max: 3.3W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 17A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 5.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.8V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 9.9 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 56 A
• Power Dissipation: 35 W
• Gate Charge Qg: 9.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFH8330TRPBFTR

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Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
10000
1000
1000
1000
100
0.1
100
100
Fig 3. Typical Transfer Characteristics
10
1.0
10
1
Fig 1. Typical Output Characteristics
0.1
0
1
1
C oss
C rss
V DS , Drain-to-Source Voltage (V)
C iss
2.5V
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
1
2
3
T J = 25°C
10
≤ 60μs PULSE WIDTH
Tj = 25°C
f = 1 MHZ
10
V DS = 15V
≤60μs PULSE WIDTH
4
5
T J = 150°C
TOP
BOTTOM
100
6
7
VGS
10V
7.0V
5.0V
4.5V
3.5V
3.0V
2.8V
2.5V
1000
100
8
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
1000
100
14.0
12.0
10.0
10
1
8.0
6.0
4.0
2.0
0.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
Fig 2. Typical Output Characteristics
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
0
I D = 20A
I D = 20A
V GS = 10V
V DS , Drain-to-Source Voltage (V)
2.5V
V DS = 24V
V DS = 15V
V DS = 6.0V
5
T J , Junction Temperature (°C)
Q G , Total Gate Charge (nC)
1
10
10
≤ 60μs PULSE WIDTH
Tj = 150°C
15
TOP
BOTTOM
20
100
25
VGS
10V
7.0V
5.0V
4.5V
3.5V
3.0V
2.8V
2.5V
1000
30
3