UBA2211BP/N1 NXP Semiconductors, UBA2211BP/N1 Datasheet
UBA2211BP/N1
Specifications of UBA2211BP/N1
Related parts for UBA2211BP/N1
UBA2211BP/N1 Summary of contents
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UBA2211 Half-bridge power IC family for CFL lamps Rev. 2.1 — 7 March 2011 1. General description The UBA2211 family of integrated circuits are a range of high voltage monolithic ICs for driving Compact Fluorescent Lamps (CFL) in half-bridge configurations. ...
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... Each device in the family incorporates the same controller functionality ensuring easy power scaling and roll-out across a complete range of CFLs 3. Applications Compact Fluorescent Lamps for indoor and outdoor applications 4. Ordering information Table 1. Type number UBA2211AP/N1 UBA2211BP/N1 UBA2211CP/N1 UBA2211AT/N1 UBA2211BT/N1 UBA2211CT/N1 UBA2211 Preliminary data sheet Ordering information ...
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... NXP Semiconductors 5. Block diagram UBA2211 O(ref)RMS OTP osc RC 8(7) CONTROLLED OSCILLATOR C osc SW 1( burn state 2 X SGND 2( 10, 13) n.p. in the diagram means not present in DIP8 package Fig 1. Block diagram In the SO14 package, the two diodes which are required for the DVDT supply are integrated and connected between pins DVDT and PGND ...
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... NXP Semiconductors 6. Pinning information 6.1 Pinning 1 SW SGND 2 UBA2211P 3 FS SENSE 4 014aab092 Fig 2. Pin configuration for UBA2211XP (SOT97-1) 6.2 Pin description Table 2. Symbol SW SGND FS SENSE OUT DVDT PGND UBA2211 Preliminary data sheet OUT Fig 3. Pin description Pin UBA2211XP UBA2211XT 10, 13 signal ground ...
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... NXP Semiconductors 7. Functional description 7.1 Supply voltage The UBA2211 family is powered using the start-up current source and the V When the voltage on pin HV increases, the V internal Junction gate Field-Effect Transistor (JFET) current source. The voltage on pin V rises until V DD half-bridge starts switching causing the charge pump activate and in turn supply V The amount of current flowing towards V momentary frequency ...
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... NXP Semiconductors The output voltage of the bridge changes with the falling edge of the signal on pin RC. The nominal half-bridge frequency is shown osc nom The maximum frequency is 2.5 × f internal LSPT and HSPT drive signals and the output is shown in Fig 4. 7.5 Preheat state ...
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... NXP Semiconductors 2.5 × f 0.6 × V Fig 5. 7.6 Ignition state The ignition state is entered after the preheat state has finished. The capacitor on pin charged During this frequency sweep, the resonance frequency is reached resulting in the ignition of the lamp (see and lamp capacitor (C reaches 0.6 × ...
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... NXP Semiconductors T 1 × --------- - T osc Where T Taking the square root of both sides results in 1 × --------- - T osc or RMS V A constant current flows through the power switches and the lamp which is defined by the internal reference voltage (V The R SENSE ratio between them is fixed. However by adding a resistor in parallel to C this ratio can be adjusted ...
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... NXP Semiconductors 2.5 × f 0.6 × V Fig 6. 7.11 Saturation Current Protection (SCP) A critical parameter in the design of the lamp inductor is its saturation current. When the momentary inductor exceeds its saturation current, the inductance drops significantly. If this happens, the inductor current and the current flowing through the LSPT and HSPT power switches increases rapidly ...
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... NXP Semiconductors 8. Limiting values Table 3. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter SENSE OUT I DVDT stg V ESD [1] X where the last letter [2] In accordance with the Human Body Model (HBM): equivalent to discharging a 100 pF capacitor through a 1.5 kΩ series resistor. ...
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... NXP Semiconductors 9. Thermal characteristics Table 4. Symbol R th(j-a) R th(j-c) [1] In accordance with IEC 60747-1 10. Characteristics Table 5. Characteristics ° all voltages are measured with respect to SGND; positive currents flow into the IC. j Symbol Parameter High-voltage supply V voltage on pin voltage on pin FS FS Low-voltage supply ...
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... NXP Semiconductors Table 5. Characteristics …continued ° all voltages are measured with respect to SGND; positive currents flow into the IC. j Symbol Parameter I saturation current sat Internal oscillator f internal oscillator frequency osc(int) f nominal oscillator frequency osc(nom) Δf /ΔT nominal oscillator frequency osc(nom) variation with temperature ...
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... NXP Semiconductors 11. Application information D1 D4 L_N AC input R fuse L_L D2 D3 Fig 7. Application diagram UBA2211 Preliminary data sheet L FILT C OUT1 L lamp LAMP C lamp C BUF R osc C OUT2 C VDD All information provided in this document is subject to legal disclaimers. Rev. 2.1 — 7 March 2011 Half-bridge power IC family for CFL lamps ...
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... NXP Semiconductors 12. Package outline DIP8: plastic dual in-line package; 8 leads (300 mil pin 1 index 1 DIMENSIONS (inch dimensions are derived from the original mm dimensions UNIT max. min. max. mm 4.2 0.51 3.2 inches 0.17 0.02 0.13 Note 1. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included. ...
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... NXP Semiconductors SO14: plastic small outline package; 14 leads; body width 3 pin 1 index 1 e DIMENSIONS (inch dimensions are derived from the original mm dimensions) A UNIT max. 0.25 1.45 mm 1.75 0.25 0.10 1.25 0.010 0.057 inches 0.069 0.01 0.004 0.049 Note 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. ...
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... NXP Semiconductors 13. Revision history Table 6. Revision history Document ID Release date UBA2211 v.2.1 20110307 • Modifications: Data sheet status change from objective data sheet to preliminary data sheet. UBA2211 v.2 20110103 UBA2211 v.1 20100628 UBA2211 Preliminary data sheet Half-bridge power IC family for CFL lamps ...
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... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or ...
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... Preliminary data sheet NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... NXP Semiconductors 16. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 2.1 System integration . . . . . . . . . . . . . . . . . . . . . . 1 2.2 Burner lifetime . . . . . . . . . . . . . . . . . . . . . . . . . 2 2.3 Safety . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2.4 Ease of use Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 4 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 5 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 Pinning information . . . . . . . . . . . . . . . . . . . . . . 4 6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 7 Functional description . . . . . . . . . . . . . . . . . . . 5 7.1 Supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . 5 7 ...