SST39VF400A-70-4I-M1QE Microchip Technology, SST39VF400A-70-4I-M1QE Datasheet - Page 9

• Manufacturer Part Number: SST39VF400A-70-4I-M1QE
• Description: 2.7V To 3.6V 4Mbit Multi-Purpose Flash 48 WFBGA 4x6x0.8 Mm TRAY
• Manufacturer: Microchip Technology

Specifications of SST39VF400A-70-4I-M1QE

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 4M (256K x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-WFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash
SST39LF200A / SST39LF400A / SST39LF800A
SST39VF200A / SST39VF400A / SST39VF800A
TABLE 6: System Interface Information for SST39LF200A/400A/800A and SST39VF200A/400A/800A
TABLE 7: Device Geometry Information for SST39LF/VF200A
©2010 Silicon Storage Technology, Inc.
Address
Address
1. 0030H for SST39LF200A/400A/800A and 0027H for SST39VF200A/400A/800A
1CH
1DH
2CH
2DH
1BH
1EH
1FH
2AH
2BH
2EH
2FH
20H
21H
22H
23H
24H
25H
26H
27H
28H
29H
30H
31H
32H
33H
34H
0027H
0030H
003FH
0036H
0000H
0000H
0004H
0000H
0004H
0006H
0001H
0000H
0001H
0001H
0012H
0001H
0000H
0000H
0002H
0000H
0010H
0000H
0003H
0000H
0000H
0001H
Data
Data
1
1
Data
V
DQ
V
DQ
V
V
Typical time out for Word-Program 2
Typical time out for min size buffer program 2
Typical time out for individual Sector/Block-Erase 2
Typical time out for Chip-Erase 2
Maximum time out for Word-Program 2
Maximum time out for buffer program 2
Maximum time out for individual Sector/Block-Erase 2
Maximum time out for Chip-Erase 2
Data
Device size = 2
Flash Device Interface description; 0001H = x16-only asynchronous interface
Maximum number of bytes in multi-byte write = 2
Number of Erase Sector/Block sizes supported by device
Sector Information (y + 1 = Number of sectors; z x 256B = sector size)
y = 63 + 1 = 64 sectors (003FH = 63)
z = 16 x 256 Bytes = 4 KByte/sector (0010H = 16)
Block Information (y + 1 = Number of blocks; z x 256B = block size)
y = 3 + 1 = 4 blocks (0003H = 3)
z = 256 x 256 Bytes = 64 KByte/block (0100H = 256)
DD
DD
PP
PP
7
7
-DQ
-DQ
min (00H = no V
max (00H = no V
Min (Program/Erase)
Max (Program/Erase)
4
4
: Volts, DQ
: Volts, DQ
N
Byte (12H = 18; 2
3
3
PP
-DQ
-DQ
PP
pin)
pin)
0
0
: 100 millivolts
: 100 millivolts
N
ms (2
18
N
N
9
times typical (2
= 256 KByte)
µs (2
N
N
6
times typical (2
times typical
= 64 ms)
4
= 16 µs)
N
µs (00H = not supported)
N
(00H = not supported)
N
1
ms (2
N
x 2
times typical (2
1
6
x 2
4
= 128 ms)
= 16 ms)
4
= 32 µs)
1
x 2
4
= 32 ms)
S71117-13-000
Data Sheet
T6.2 1117
T7.2 1117
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