LM113H National Semiconductor, LM113H Datasheet - Page 2

• Manufacturer Part Number: LM113H
• Description: Diode, Reference; 1.22 V; 50 mA (Max.) mA; 50 mA (Max.); 0.25 Ohm (Typ.)
• Manufacturer: National Semiconductor
• Type: Voltage Regulatorr

Specifications of LM113H

• Fixed / Adjust / Prog: Precision
• Output Voltage (max): 1.22V
• Reference Voltage Accuracy (max): 5
• Load Regulation: 15mV
• Operating Temp Range: -55C to 125C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 2
• Package Type: TO-46
• Average Temperature Coefficient: 0.01 %⁄°C (Typ.)
• Current, Forward: 50 mA (Max.)
• Current, Output: 50 mA
• Current, Reverse: 50 mA (Max.) mA
• Impedance, Package Thermal: 0.25 Ohm (Typ.)
• Power Dissipation: 100 mW
• Resistance, Thermal, Junction To Case: 80 °C/W
• Temperature, Operating, Maximum: +125 °C
• Temperature, Operating, Minimum: -55 °C
• Temperature, Operating, Range: -55 to +125 °C
• Voltage, Breakdown, Reverse: 1.22 V
• Voltage, Forward: 0.67 V (Typ.)
• Voltage, Noise: 5 μV
• Voltage, Output: 0.67 V
• Voltage, Reference: 1.22 V
• Low Breakdown Voltage: 1.220V
• Lead Free Status / RoHS Status: Not Compliant

Absolute Maximum Ratings
If Military Aerospace specified devices are required
please contact the National Semiconductor Sales
Office Distributors for availability and specifications
(Note 3)
Power Dissipation (Note 1)
Reverse Current
Forward Current
Electrical Characteristics
Note 1 For operating at elevated temperatures the device must be derated based on a 150 C maximum junction and a thermal resistance of 80 C W junction to
case or 440 C W junction to ambient
Note 2 These specifications apply for T
inch Kelvin contact sockets are also recommended The diode should not be operated with shunt capacitances between 200 pF and 0 1 F unless isolated by at
least a 100
Note 3 Refer to the following RETS drawings for military specifications RETS113-1X for LM113-1 RETS113-2X for LM113-2 or RETS113X for LM113
Typical Performance Characteristics
Reverse Breakdown Voltage
Reverse Breakdown Voltage
Reverse Dynamic Impedance
Forward Voltage Drop
RMS Noise Voltage
Reverse Breakdown Voltage
Breakdown Voltage Temperature
LM113 LM313
LM113-1
LM113-2
Change
Change with Current
Coefficient
resistor as it may oscillate at some currents
Parameter
Temperature Drift
A
e
25 C unless stated otherwise At high currents breakdown voltage should be measured with lead lengths less than
(Note 2)
I
0 5 mA
I
I
I
10 Hz
I
0 5 mA
T
1 0 mA
T
R
R
R
F
R
MIN s
MIN s
e
e
e
e
e
Conditions
1 0 mA
1 mA
1 mA
10 mA
1 mA
s
100 mW
s
s
s
T
T
f
50 mA
50 mA
A s
A s
Reverse Dynamic Impedance
I
I
I
s
R s
R s
R s
10 kHz
T
T
20 mA
10 mA
MAX
10 mA
MAX
2
Storage Temperature Range
Lead Temperature
Operating Temperature Range
(Soldering 10 seconds)
LM113
LM313
1 160
1 210
1 195
Min
1 220
Reverse Characteristics
1 22
1 22
0 25
0 67
0 01
Typ
6 0
0 2
5
1 280
1 232
1 245
Max
1 0
0 8
1 0
15
15
b
b
65 C to
55 C to
0 C to
TL H 5713 – 3
a
a
Units
% C
a
150 C
300 C
125 C
mV
mV
V
V
V
V
70 C
V