MT45W2MW16BGB-708 AT Micron Technology Inc, MT45W2MW16BGB-708 AT Datasheet

MT45W2MW16BGB-708 AT

Manufacturer Part Number

MT45W2MW16BGB-708 AT

Description

Manufacturer

Micron Technology Inc

Datasheet

1.MT45W2MW16BGB-708_AT.pdf (3 pages)

Specifications of MT45W2MW16BGB-708 AT

Operating Temperature (min)

-40C

Mounting

Surface Mount

Operating Temperature Classification

Industrial

Lead Free Status / RoHS Status

Compliant

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32Mb Burst CellularRAM™ 1.0 Memory

Addendum

MT45W2MW16BGB-708 AT

Features

• Single device supports asynchronous, page, and

• V

• 1.7V–1.95V V

• 1.7V–3.6V V

• Random Access Time: 70ns

• Burst Mode READ and WRITE Access

• 4, 8, 16 words, or continuous burst

• Burst wrap or sequential

• MAX clock rate: 80 MHz (

• Burst initial latency: 50ns (4 clocks) @ 80MHz

•

• Page Mode Read Access

• Sixteen-word page size

• Interpage read access: 70ns

• Intrapage read access: 20ns

• Low Power Consumption

• Asynchronous READ: < 30mA

• Intrapage Read: < 15mA

• Initial access, burst READ:

• Continuous burst READ: < 18mA

• Standby: < 65µA (TYP at 25°C)

• Deep power-down: < 3µA (TYP)

• Low-Power Features

• On-chip Temperature Compensated Refresh (TCR)

• Partial Array Refresh (PAR)

• Deep Power-Down (DPD) Mode

PDF: 09005aef82c6f05f/Source: 09005aef82c6f04b

32Mb CellularRAM 1.0 AT Addendum.fm - Rev. A 05/07 EN

burst operations

(50ns [4 clocks] @ 80 MHz) < 30mA

ACLK: 9ns @ 80MHz

, V

Q Voltages

Products and specifications discussed herein are subject to change by Micron without notice.

CLK = 12.5ns)

Options

• Configuration:

• Package

• Timing

• Standby Power

• Operating Temperature Range

32Mb Burst CellularRAM 1.0 Addendum

2 Meg x 16

54-ball VFBGA—”green”

70ns access

80MHz

Standard:

Automotive (-40°C to +105°C)

Micron Technology, Inc., reserves the right to change products or specifications without notice.

Q I/O Voltage Supply: 3.6V

Core Voltage Supply: 1.8V

MT45W2MW16BGB-708AT

Part Number Example:

MT45W2MW16B

Designator

None

Features

-70

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MT45W2MW16BGB-708 AT Summary of contents

Page 1

... Burst CellularRAM™ 1.0 Memory Addendum MT45W2MW16BGB-708 AT Features • Single device supports asynchronous, page, and burst operations • Voltages CC CC • 1.7V–1.95V V CC • 1.7V–3. • Random Access Time: 70ns • Burst Mode READ and WRITE Access • words, or continuous burst • ...

Page 2

Parameter Relaxation To support the automotive temperature range, -40°C to +105°C, no change to the device specification is needed. 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 prodmktg@micron.com www.micron.com Customer Comment Line: 800-932-4992 CellularRAM is a ...

Page 3

Revision History • Original document, Rev ...

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