MT45W8MW16BGX856IT Micron Technology Inc, MT45W8MW16BGX856IT Datasheet - Page 18

• Manufacturer Part Number: MT45W8MW16BGX856IT
• Manufacturer: Micron Technology Inc

Specifications of MT45W8MW16BGX856IT

• Operating Temperature (max): 85C
• Operating Temperature (min): -40C
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Compliant

Access Using CRE
Figure 12:
PDF: 09005aef80ec6f79/Source: 09005aef80ec6f65
128mb_burst_cr1_5_p26z__2.fm - Rev. H 9/07 EN
(except A[19:18])
A[19:18]
DQ[15:0]
LB#/UB#
A[22:0]
ADV#
WE#
OE#
CRE
CE#
Configuration Register WRITE, Asynchronous Mode, Followed by READ ARRAY
Operation
1
Notes:
The registers can be accessed using either a synchronous or an asynchronous operation
when the control register enable (CRE) input is HIGH. (See Figures 12 through 15 on
pages 18 through 21.) When CRE is LOW, a READ or WRITE operation will access the
memory array. The configuration register values are written via addresses A[22:0]. In an
asynchronous WRITE, the values are latched into the configuration register on the rising
edge of ADV#, CE#, or WE#, whichever occurs first; LB# and UB# are “Don’t Care.” The
BCR is accessed when A[19:18] are 10b; the RCR is accessed when A[19:18] are 00b. The
DIDR is read when A[19:18] are 01b. For reads, address inputs other than A[19:18] are
“Don’t Care,” and register bits 15:0 are output on DQ[15:0]. Micron strongly recommends
reading the memory array immediately after performing a configuration register READ
or WRITE operation.
1. A[19:18] = 00b to load RCR, and 10b to load BCR.
Select Control Register
OPCODE
t AVS
Initiate Control Register Access
128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/
t AVS
t VP
t AVH
t AVH
t CW
18
Write Address Bus Value
to Control Register
t WP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Page/Burst CellularRAM 1.5 Memory
t CPH
Address
Address
©2004 Micron Technology, Inc. All rights reserved.
Data Valid
Don’t Care