MT8HTF6464HY-53EF1 Micron Technology Inc, MT8HTF6464HY-53EF1 Datasheet
MT8HTF6464HY-53EF1
Specifications of MT8HTF6464HY-53EF1
Related parts for MT8HTF6464HY-53EF1
MT8HTF6464HY-53EF1 Summary of contents
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... MT8HTF6464H(I) – 512MB MT8HTF12864H(I) – 1GB For component data sheets, refer to Micron’s Web site: Features • 200-pin, small outline, dual in-line memory module (SODIMM) • Fast data transfer rates: PC2-3200, PC2-4200, PC2-5300, or PC2-6400 • 256MB (32 Meg x 64), 512MB (64 Meg x 64), 1GB (128 Meg x 64) • ...
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... MT8HTF12864HY-40E__ Notes: 1. All part numbers end with a two-place code (not shown), designating component and PCB revisions. Consult factory for current revision codes. Example: MT8HTF6464HY-667A3. 2. For the latest componentdata sheets, see Micron’s Web site: www.micron.com/products/dram/ddr2 PDF: 09005aef80eec96e/Source: 09005aef80eec946 HTF8C32_64_128x64HG.fm - Rev. E 6/08 EN ...
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... Pin for 256MB and 512MB, BA2 for 1GB. 2. Pin 116 is NC for 256MB, A13 for 512MB and 1GB. PDF: 09005aef80eec96e/Source: 09005aef80eec946 HTF8C32_64_128x64HG.fm - Rev. E 6/08 EN 256MB, 512MB, 1GB: (x64, SR) 200-Pin DDR2 SDRAM SODIMM Module Pin Assignments and Descriptions Pin Symbol Pin Symbol Pin Symbol Pin Symbol A1 151 DQ42 ...
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... DDSPD V Supply Reference voltage: V REF V Supply Ground – No connect: These pins are not connected on the module. PDF: 09005aef80eec96e/Source: 09005aef80eec946 HTF8C32_64_128x64HG.fm - Rev. E 6/08 EN 256MB, 512MB, 1GB: (x64, SR) 200-Pin DDR2 SDRAM SODIMM Module Pin Assignments and Descriptions 2 C bus. /2. DD Micron Technology, Inc., reserves the right to change products or specifications without notice. ...
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... RAS#: DDR2 SDRAM CAS# CAS#: DDR2 SDRAM WE# WE#: DDR2 SDRAM CKE0 CKE0: DDR2 SDRAM ODT0 ODT0: DDR2 SDRAM PDF: 09005aef80eec96e/Source: 09005aef80eec946 HTF8C32_64_128x64HG.fm - Rev. E 6/08 EN 256MB, 512MB, 1GB: (x64, SR) 200-Pin DDR2 SDRAM SODIMM Module Pin Assignments and Descriptions DM CS# DQS DQS CS# DQS DQS# ...
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... The double data rate architecture is essentially a 4n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the DDR2 SDRAM module effectively consists of a single 4n-bit- wide, one-clock-cycle data transfer at the internal DRAM core and four corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O pins ...
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Electrical Specifications Stresses greater than those listed in Table 8 may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions above those indicated in the ...
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... Micron encourages designers to simulate the signal characteristics of the system’s memory bus to ensure adequate signal integrity of the entire memory system. Power Operating voltages are specified at the DRAM, not at the edge connector of the module. Designers must account for any system voltage drops at anticipated power levels to ensure the required supply voltage is maintained. ...
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Table 10: DDR2 I Specifications and Conditions – 256MB DD Values are for the MT47H32M8 DDR2 SDRAM only and are computed from values specified in the 256Mb (32 Meg x 8) component data sheet Parameter/Condition Operating one bank active-precharge current; ...
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Table 11: DDR2 I Specifications and Conditions – 512MB DD Values are for the MT47H64M8 DDR2 SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8) component data sheet Parameter/Condition Operating one bank active-precharge current; ...
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Table 12: DDR2 I Specifications and Conditions – 1GB (die revision A) DD Values are for the MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) component data sheet Parameter/Condition Operating one ...
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Table 13: DDR2 I Specifications and Conditions – 1GB (die revision E) DD Values are for the MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) component data sheet Parameter/Condition Operating one ...
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Serial Presence-Detect Table 14: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input leakage current GND ...
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... Module Dimensions Figure 3: 200-pin DDR2 SODIMM Module Dimensions 2.0 (0.079) R (2X) U1 1.8 (0.071) D (2X) 6.0 (0.236) TYP 1.0 (0.039) TYP 2.0 (0.079) TYP U6 PIN 200 Notes: 1. All dimensions are in millimeters (inches); MAX/MIN or typical (TYP) where noted. 2. The dimensional diagram is for reference only. Refer to the MO document for complete design dimensions ...