MR2A08AMYS35 EverSpin Technologies Inc, MR2A08AMYS35 Datasheet - Page 8

• Manufacturer Part Number: MR2A08AMYS35
• Description: IC MRAM 4MBIT 35NS 44TSOP
• Manufacturer: EverSpin Technologies Inc
• Series: -r

Specifications of MR2A08AMYS35

• Format - Memory: RAM
• Memory Type: MRAM (Magnetoresistive RAM)
• Memory Size: 4M (512K x 8)
• Speed: 35ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 44-TSOP (0.400", 10.16mm Width)
• Lead Free Status / RoHS Status: Supplier Unconfirmed

Everspin Technologies © 2009
Timing Specifications
Read Mode
1
2
3
Addresses valid before or at the same time E goes low.
Parameter
Read cycle time
Address access time
Enable access time
Output enable access time
Output hold from address change
Enable low to output active
Output enable low to output active
Enable high to output Hi-Z
Output enable high to output Hi-Z
W is high for read cycle. Power supplies must be properly grounded and decoupled, and bus contention conditions must be
minimized or eliminated during read or write cycles.
This parameter is sampled and not 100% tested. Transition is measured ±200 mV from the steady-state voltage.
2
3
3
3
3
Table 3.3 Read Cycle Timing
Figure 3.3A Read Cycle 1
Figure 3.3B Read Cycle 2
8
Symbol
t
t
t
t
t
t
t
t
t
AVAV
AVQV
ELQV
GLQV
AXQX
ELQX
GLQX
EHQZ
GHQZ
Document Number: MR2A08A Rev. 4, 7/2009
Min
35
-
-
-
3
3
0
0
0
1
Max
-
35
35
15
-
-
-
15
10
MR2A08A
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns