TLP351F Toshiba, TLP351F Datasheet
TLP351F
Manufacturer Part Number
TLP351F
Description
Manufacturer
Toshiba
Datasheet
1.TLP351F.pdf
(2 pages)
Specifications of TLP351F
Number Of Elements
1
Input Type
DC
Package Type
PDIP
Propagation Delay Time
700ns
Pin Count
8
Mounting
Through Hole
Output Type
Push-Pull
Isolation Voltage
3750Vrms
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TLP351F(TP4.F)
Manufacturer:
TOSHIBA
Quantity:
50 000
Inverter for Air Conditioner
IGBT/Power MOSFET Gate Drive
Industrial Inverter
The TOSHIBA TLP351F consists of a GaAℓAs light emitting diode and a
integrated photodetector.
This unit is 8-lead DIP package.
TLP351F is suitable for gate driving circuit of IGBT or power MOSFET.
Especially TLP351F is capable of “direct” gate drive of lower Power
IGBTs.
Absolute maximum ratings and electrical characteristics are the same as
TLP351 technical datasheet.
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Truth Table
Peak output current: ±0.6 A (max)
Guaranteed performance over temperature: −40 to 100°C
Supply current: 2 mA (max)
Power supply voltage: 10 to 30 V
Threshold input current : I
Switching time (t
Common mode transient immunity: 10 kV/μs
Isolation voltage: 3750 Vrms
Construction mechanical rating
Option(D4)
Construction mechanical rating
Creepage distance
Clearance
Insulation thickness
VDE Approved : DIN EN60747-5-2
Maximum Operating Insulation Voltage : 1140V
Highest Permissible Over Voltage
(Note): When an EN60747-5-2 approved type is needed,
Input
H
L
Please designate “Option(D4)”
LED
OFF
ON
pLH
/t
pHL
OFF
TOSHIBA Photocoupler GaAℓAs IRED + Photo IC
Tr1
ON
7.62mm pitch
6.4 mm (min)
6.4 mm (min)
0.4 mm (min)
) : 700 ns (max)
TLP351 type
F
= 5 mA (max)
OFF
Tr2
ON
TLP351F
: 6000V
Output
10.16mm pitch
TLP351F type
8.0 mm (min)
8.0 mm (min)
0.4 mm (min)
H
L
PK
PK
1
Pin Configuration
Schematic
V
2+
3−
F
1
2
3
4
A 0.1 μF bypass capacitor must be connected
between pin 8 and 5.
I
F
Weight: 0.54 g (typ.)
TOSHIBA
(top view)
(Tr1)
(Tr2)
I
I
CC
O
11-10C402
8
6
5
V
V
GND
8
7
6
5
2007-10-01
TLP351F
CC
O
Unit: mm
1: NC
2: Anode
3: Cathode
4: NC
5: GND
6: V
7: NC
8: V
O
CC
(output)
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TLP351F Summary of contents
Page 1
... The TOSHIBA TLP351F consists of a GaAℓAs light emitting diode and a integrated photodetector. This unit is 8-lead DIP package. TLP351F is suitable for gate driving circuit of IGBT or power MOSFET. Especially TLP351F is capable of “direct” gate drive of lower Power IGBTs. Absolute maximum ratings and electrical characteristics are the same as TLP351 technical datasheet. • ...
Page 2
... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 2 TLP351F 2007-10-01 ...