BA891 NXP Semiconductors, BA891 Datasheet - Page 3

• Manufacturer Part Number: BA891
• Description: Planar high-performance band-switching diode in the ultra small SOD523 SMD plastic package
• Manufacturer: NXP Semiconductors
• Type: Switchr

Specifications of BA891

• Configuration: Single
• Forward Current: 100mA
• Forward Voltage: 1V
• Power Dissipation: 715mW
• Operating Temperature Classification: Military
• Reverse Voltage: 35V
• Package Type: I-IGIA
• Mounting: Surface Mount
• Maximum Series Resistance @ Minimum If: 0.7@3mAOhm
• Maximum Series Resistance @ Maximum If: 0.5@10mAOhm
• Operating Temperature (max): 150C
• Operating Temperature (min): -65C
• Pin Count: 2
• Applications Frequency Range: VHF
• Lead Free Status / RoHS Status: Compliant

NXP Semiconductors
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
Note
1. Guaranteed on AQL basis; inspection level S4, AQL 1.0.
handbook, halfpage
R
V
I
C
r
L
SYMBOL
SYMBOL
j
R
D
S
= 25 C unless otherwise specified.
F
Band-switching diode
th j-s
d
f = 1 MHz; T
Fig.2
(pF)
C d
0.8
0.6
0.4
0.2
1
0
0
Diode capacitance as a function of reverse
voltage; typical values.
thermal resistance from junction to soldering point
forward voltage
reverse current
diode capacitance
diode forward resistance
series inductance
j
= 25 C.
10
PARAMETER
20
V R (V)
PARAMETER
MGL479
30
Rev. 04 - 8 January 2008
I
V
f = 1 MHz; note 1; see Fig.2
f = 100 MHz; note 1; see Fig.3
F
R
= 10 mA
V
V
I
I
F
F
= 30 V
R
R
= 3 mA
= 10 mA
= 1 V
= 3 V
CONDITIONS
handbook, halfpage
f = 100 MHz; T
Fig.3
10
( )
r D
10
10
1
1
1
Diode forward resistance as a function of
forward current; typical values.
j
= 25 C.
0.8
0.65
0.42
0.28
0.6
TYP.
1
VALUE
85
Product specification
I F (mA)
1
20
1.05
0.9
0.7
0.5
MAX.
MGL478
BA891
UNIT
K/W
3 of 6
10
V
nA
pF
pF
nH
UNIT