MADP-007167-12250T TE Connectivity, MADP-007167-12250T Datasheet - Page 2

• Manufacturer Part Number: MADP-007167-12250T
• Manufacturer: TE Connectivity

Specifications of MADP-007167-12250T

• Lead Free Status / RoHS Status: Compliant

2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
PIN Diode π Quad Attenuator
Electrical Specifications @ 25 °C
Typical 50 Ω SOT-25 RF Performance @ +25 °C using Wide Band RF Circuit Design
( Values Shown include Through Loss Calibrated Out of RF Test Circuit )
MA4P290-1225T
RF C.W. Incident
Insertion Loss
Settling Time
Parameter
Return Loss
Attenuation
Input IP3
Input IP3
Input IP3
Input IP3
Minority Carrier Lifetime (T
Power
Reverse Current (I
Capacitance (C
Resistance (R
Resistance (R
Resistance (R
I Region Width
Parameter
Frequency Range
50 – 3,000 MHz
50 – 3,000 MHz
50 – 3,000 MHz
50 – 3,000 MHz
50 – 3,000 MHz
50 – 3,000 MHz
50 – 3,000 MHz
50 – 3,000 MHz
50 – 3,000 MHz
S
S
S
T
)
)
)
)
R
)
L
)
Within 1 dB of Final Attenuation Value
F = 100 MHz, I = 100mA
F = 100 MHz, I = 10 mA
F1 = 1010 MHz, F2 = 1020 MHz
F1 = 1010 MHz, F2 = 1020 MHz
F = 100 MHz, I = 1 mA
F1 = 110 MHz, F2 = 120 MHz
F1 = 110 MHz, F2 = 120 MHz
F = 1 MHz, V = 50 V
and 3.7 V Shunt 1 and 2 Bias
and 3.7 V Shunt 1 and 2 Bias
and 3.7 V Shunt 1 and 2 Bias
and 3.7 V Shunt 1 and 2 Bias
and 3.7 V Shunt 1 and 2 Bias
and 3.7 V Shunt 1 and 2 Bias
and 3.7 V Shunt 1 and 2 Bias
and 3.7V Shunt 1 and 2 Bias
0 – 20 V Series Diode Bias
13 mA / Series Diode
13 mA / Series Diode
+ 10 V / Series Diode
+ 10 V / Series Diode
Condition
0 mA / Series Diode
IF = 10 mA
Vr = 200 V
Test Conditions
0 V / Series Diode
0 V / Series Diode
F = 1 GHz
F = 1 GHz
F = 1 GHz
F = 1 GHz
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changes to the product(s) or information contained herein without notice.
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Units
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
uS
Unit
μA
μm
pF
μS
Ω
Ω
Ω
Min.
Typical
175
.20
2.7
85
11
3
Typ.
43.5
43.5
+ 20
-2.8
-15
-36
45
39
10
Max.
.30
10
16
Max.
Rev. V3