BA479GTAP50 Vishay, BA479GTAP50 Datasheet - Page 2

BA479GTAP50

Manufacturer Part Number
BA479GTAP50
Description
Manufacturer
Vishay
Type
Attenuatorr
Datasheet

Specifications of BA479GTAP50

Configuration
Single
Forward Current
50mA
Operating Temperature Classification
Military
Reverse Voltage
30V
Mounting
Through Hole
Operating Temperature (max)
125C
Pin Count
2
Applications Frequency Range
HF/VHF/UHF
Lead Free Status / RoHS Status
Compliant
BA479G, BA479S
Vishay Semiconductors
Electrical Characteristics
T
Typical Characteristics
T
www.vishay.com
2
Forward voltage
Reverse current
Diode capacitance
Differential forward resistance
Reverse impedance
Minority carrier lifetime
amb
amb
Figure 2. Differential Forward Resistance vs. Forward Current
95 9734
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
95 9735
10 000
Figure 1. Forward Current vs. Forward Voltage
0.01
1000
100
Parameter
0.1
100
10
10
1
0.001
1
0
T
amb
= 25 °C
f > 20 MHz
0.4
T
j
0.01
= 25 °C
I
V
F
F
- Forward Current (mA)
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
- Forward Voltage (V)
0.8
For technical questions within your region, please contact one of the following:
Scattering Limit
0.1
1.2
f = 100 MHz, I
I
F
f = 100 MHz, V
f = 100 MHz, V
= 10 mA, I
Test condition
1
I
V
F
1.6
R
= 20 mA
= 30 V
R
F
2.0
= 10 mA
10
= 1.5 mA
R
R
= 0
= 0
BA479G
BA479S
Part
Figure 3. Typ. Cross Modulation Distortion vs. Frequency f
95 9733
Symbol
- 20
- 40
- 60
- 80
C
20
V
I
z
z
DiodesEurope@vishay.com
r
τ
R
0
F
D
f
r
r
f
0
2
, modulated with 200 kHz, m = 100 % (MHz)
Π
- Circuit with 10 dB Attenuation
Min.
20
5
9
f
1
= 100 MHz unmodulated
V
0
= 40 dBmV
40
Typ.
4
Document Number 85527
60
Rev. 1.7, 05-Aug-10
1000
Max.
0.5
50
50
80
Unit
mV
nA
pF
µs
Ω
2

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