IRG4IBC30KD-110 International Rectifier, IRG4IBC30KD-110 Datasheet
IRG4IBC30KD-110
Specifications of IRG4IBC30KD-110
Related parts for IRG4IBC30KD-110
IRG4IBC30KD-110 Summary of contents
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... Thermal Resistance Parameter R Junction-to-Case - IGBT JC R Junction-to-Case - Diode CS R Junction-to-Ambient, typical socket mount JA Wt Weight www.irf.com IRG4IBC30KD = 15V ultrafast, n-ch an nel 300 (0.063 in. (1.6mm) from case) Typ. ––– ––– ––– 2.0 (0.07) PD -91690A Short Circuit Rated ...
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... IRG4IBC30KD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown VoltageS (BR)CES Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th) J Forward Transconductance Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop FM I Gate-to-Emitter Leakage Current ...
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... V , Collector-to-Emitter Voltage (V) CE Fig Typical Output Characteristics www.irf.com 1 f, Frequency (KHz) (Load Current = I of fundamental) RMS 100 150 15V 0 Fig Typical Transfer Characteristics IRG4IBC30KD For both: D uty cy cle: 50 125° 90°C s ink G ate drive as specified Dis sip ation = 50V CC 5µs PULSE WIDTH ...
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... IRG4IBC30KD 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 4 15V PULSE WIDTH 3.0 2.0 1.0 -60 -40 -20 125 150 ° ...
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... Fig Typical Switching Losses vs. Gate Resistance www.irf.com SHORTED 100 0 Fig Typical Gate Charge vs Ohm 15V 480V CC 1 0.1 -60 -40 - Fig Typical Switching Losses vs. IRG4IBC30KD = 400V = 16A Total Gate Charge (nC) G Gate-to-Emitter Voltage 8. 100 120 140 160 ° Junction Temperature ( Junction Temperature 80 5 ...
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... IRG4IBC30KD 5 Ohm 150 C ° 480V 15V 4.0 GE 3.0 2.0 1.0 0 Collector-to-emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 100 0° 5° 5° 0.4 0.8 1.2 1.6 2.0 Fo rwa rd V oltage D rop - 20V ...
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... ° ° /µ Fig Typical Reverse Recovery vs ° ° 6 / /µs) f Fig Typical Stored Charge vs. di www.irf.com ° ° . Fig Typical Recovery Current vs /dt Fig Typical di f IRG4IBC30KD / /µ ° ° 6 /µ /dt vs. di /dt (rec / ...
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... IRG4IBC30KD 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining d(on) 8 Same ty pe device . d(off) f Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Vce Fig. 18d - , µ S ...
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... µ www.irf.com D.U. 480V IRG4IBC30KD 480V @25° ...
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... IRG4IBC30KD Notes: Q Repetitive rating: V =20V; pulse width limited by maximum junction GE temperature (figure 20 =80%( =20V, L=10µ CES GE S Pulse width 80µs; duty factor T Pulse width 5.0µs, single shot. U Uses IRG4BC30KD data and test conditions Case Outline — TO-220 FULLPAK (. (. ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...