TIM1414-4LA Toshiba, TIM1414-4LA Datasheet

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TIM1414-4LA

Manufacturer Part Number
TIM1414-4LA
Description
Manufacturer
Toshiba
Datasheet
1.TIM1414-4LA.pdf (4 pages)

Specifications of TIM1414-4LA

Configuration
Single
Gate-source Voltage (max)
5V
Drain-source Volt (max)
15V
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
TIM1414-4LA
Manufacturer:
TOSHIBA
Quantity:
5 000
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 ° C )
ELECTRICAL CHARACTERISTICS ( Ta= 25 ° C )
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
3
Distortion
Drain Current
Channel Temperature Rise
Recommended Gate Resistance(Rg): 150 Ω (Max.)
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
FEATURES
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
HIGH POWER
HIGH GAIN
rd
P1dB=36.5dBm at 14.0GHz to 14.5GHz
G1dB=6.5dB at 14.0GHz to 14.5GHz
CHARACTERISTICS
CHARACTERISTICS
Order Intermodulation
SYMBOL
SYMBOL
R
V
V
G
P
ΔTch
IDS2
I
I
η
th(c-c)
IM3
GSoff
DS1
DSS
ΔG
gm
GSO
1dB
1dB
add
(VDS X IDS + Pin – P1dB)
V
I
V
I
V
V
I
Channel to Case
(Single Carrier Level)
f= 14.0 to 14.5GHz
DS
DS
GS
DS
DS
DS
GS
Two-Tone Test
CONDITIONS
CONDITIONS
Po=25.0 dBm
= 2.0A
= 60mA
= -60μA
= 3V
=
=
= 0V
VDS= 9V
X Rth(c-c)
3V
3V
BROAD BAND INTERNALLY MATCHED FET
HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM1414-4LA
UNIT
UNIT
° C/W
dBm
dBc
mS
dB
dB
° C
%
A
A
V
A
V
MIN.
36.0
MIN.
-2.0
-42
6.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-5
Rev. Sep. 2006
TYP. MAX.
36.5
TYP. MAX.
1200
-45
6.5
1.7
1.7
-3.5
23
4.0
2.9
⎯
⎯
⎯
±0.8
2.2
2.2
60
-5.0
⎯
⎯
⎯
⎯
3.5
⎯
⎯
⎯

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TIM1414-4LA Summary of contents

Page 1

... X Rth(c-c) SYMBOL CONDITIONS 2. GSoff 60mA DSS -60μA GSO GS R Channel to Case th(c-c) TIM1414-4LA UNIT MIN. TYP. MAX. dBm 36.0 36.5 dB 6.0 6.5 ⎯ A 1.7 ⎯ ⎯ dB ⎯ dBc -42 -45 ⎯ A 1.7 ° C ⎯ ⎯ UNIT MIN. TYP. MAX. ⎯ mS 1200 V -2.0 -3.5 ⎯ ...

Page 2

... CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage Temperature PACKAGE OUTLINE (2-9D1B) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM1414-4LA SYMBOL UNIT ...

Page 3

... RF PERFORMANCE Output Power (Pout) vs. Frequency V =9V DS ≅1. Pin=30.0dBm 14.0 Output Power(Pout) vs. Input Power(Pin) 40 freq.=14.5GHz 39 V =9V DS ≅1. TIM1414-4LA 14.25 Frequency(GHz) Pout ηadd 28 30 Pin(dBm ...

Page 4

... Power Dissipation(PT) vs. Case Temperature(Tc vs. OUTPUT POWER CHARACTERISTICS 3 -10 VDS IDS≅ 1.7 A f=14.5GHz Δf= 5MHz -20 -30 -40 -50 - Po(dBm), Single Carrier Level TIM1414-4LA 80 120 Tc( ° 200 160 30 ...

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