TIM1414-9L Toshiba, TIM1414-9L Datasheet

TIM1414-9L

Manufacturer Part Number

TIM1414-9L

Description

Manufacturer

Toshiba

Datasheet

1.TIM1414-9L.pdf (4 pages)

Specifications of TIM1414-9L

Configuration

Single

Gate-source Voltage (max)

Drain-source Volt (max)

15V

Operating Temperature Classification

Military

Pin Count

Lead Free Status / RoHS Status

Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

TIM1414-9L

Manufacturer:

CYPRESS

Quantity:

3 928

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MICROWAVE SEMICONDUCTOR

TECHNICAL DATA

RF PERFORMANCE SPECIFICATIONS ( Ta= 25 ° C )

Output Power at 1dB Gain

Compression Point

Power Gain at 1dB Gain

Compression Point

Drain Current

Power Added Efficiency

3rd Order Intermodulation

Distortion

Drain Current

Channel Temperature Rise

Recommended gate resistance(Rg) : Rg= 150 Ω ( MAX.)

ELECTRICAL CHARACTERISTICS ( Ta= 25 ° C )

Transconductance

Pinch-off Voltage

Saturated Drain Current

Gate-Source Breakdown

Voltage

Thermal Resistance

The information contained herein is presented only as a guide for the applications of our products. No responsibility is

assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,

No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA

FEATURES

before proceeding with design of equipment incorporating this product.

P1dB=39.5dBm at 14.0GHz to 14.5GHz

G1dB=6.0dB at 14.0GHz to 14.5GHz

HIGH POWER

HIGH GAIN

LOW INTERMODULATION DISTORTION

IM3(Min.)=−25dBc at Po=33dBm Single Carrier Level

CHARACTERISTICS

SYMBOL

ΔTch

th(c-c)

GSoff

DSS

DS1

DS2

GSO

1dB

add

Channel to Case

(VDS X IDS + Pin – P1dB)

(Single Carrier Level)

= 14.0 to 14.5GHz

= 2.4A

= 72mA

= -72 μ A

Two-Tone Test

CONDITIONS

= 3V

CONDITIONS

= 0V

Po= 33.0dBm

IDSset=2.2A

BROAD BAND INTERNALLY MATCHED FET

HERMETICALLY SEALED PACKAGE

VDS

X Rth(c-c)

MICROWAVE POWER GaAs FET

= 9

TIM1414-9L

UNIT

° C/W

dBm

dBc

° C

MIN.

39.0

-0.7

-25

5.0

⎯

-5

Rev. Mar. 2006

TYP. MAX.

2200

39.5

-2.0

6.0

2.8

5.0

3.0

⎯

-4.5

3.0

3.7

⎯

Related parts for TIM1414-9L

TIM1414-9L Summary of contents

Page 1

... X Rth(c-c) SYMBOL CONDITIONS 2. GSoff 72mA DSS -72 μ GSO GS R Channel to Case th(c-c) TIM1414-9L UNIT MIN. TYP. MAX. dBm 39.0 39.5 dB 5.0 6.0 ⎯ A 2.8 ⎯ ⎯ dBc -25 ⎯ A 2.8 ° C ⎯ ⎯ UNIT MIN. TYP. MAX. ⎯ mS 2200 V -0.7 -2.0 ⎯ A 5.0 ⎯ ...

Page 2

... ABSOLUTE MAXIMUM RATINGS ( Ta= 25 ° CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage PACKAGE OUTLINE (2-9D1B) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM1414-9L SYMBOL UNIT ° ...

Page 3

... RF PERFORMANCE Output Power (Pout) vs. Frequency VDS=9V IDS≅2.8A 41 Pin=33.5 dBm Output Power(Pout) vs. Input Power(Pin) 42 freq.=14.5GHz VDS=9V 41 IDS≅2. TIM1414-9L 14.0 14.25 Frequency(GHz) Pout ηadd 31 33 Pin(dBm ...

Page 4

... Power Dissipation(PT) vs. Case Temperature(Tc IM3 vs. Output Power Characteristics 0 VDS=9V freq.=14.5GHz -10 Δf=5MHz -20 -30 -40 - Pout(dBm) @Single carrier level TIM1414-9L 80 120 Tc( ° 160 200 36 38 ...

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