TIM1414-30L Toshiba, TIM1414-30L Datasheet

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TIM1414-30L

Manufacturer Part Number
TIM1414-30L
Description
Manufacturer
Toshiba
Datasheet

Specifications of TIM1414-30L

Configuration
Single
Gate-source Voltage (max)
5V
Drain-source Volt (max)
15V
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Compliant
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 ° C )
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
3rd Order Intermodulation
Distortion
Drain Current
Channel Temperature Rise
ELECTRICAL CHARACTERISTICS ( Ta= 25 ° C )
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefore advisable to contact TOSHIBA
FEATURES
before proceeding with design of equipment incorporating this product.
HIGH POWER
P1dB=45.0dBm at 14.0GHz to 14.5GHz
HIGH GAIN
G1dB=5.5dB at 14.0GHz to 14.5GHz
LOW INTERMODULATION DISTORTION
Recommended gate resistance(Rg) : Rg= 10 Ω ( MAX.)
IM3(Min.)=−25dBc at Po=38.0dBm Single Carrier Level
CHARACTERISTICS
CHARACTERISTICS
SYMBOL
SYMBOL
R
V
V
G
P
ΔTch
I
I
I
η
th(c-c)
IM
GSoff
DSS
gm
DS1
DS2
∆G
GSO
1dB
1dB
add
3
V
I
V
I
V
V
I
Channel to Case
DS
DS
GS
DS
DS
DS
GS
f
(VDS X IDS +Pin-P1dB)
(Single Carrier Level)
= 14.0 to 14.5GHz
= 9.6A
= 290mA
= -290 μ A
Two-Tone Test
= 3V
=
=
CONDITIONS
CONDITIONS
= 0V
Po= 38.0dBm
IDSset≅7.0A
VDS
3V
3V
X Rth(c-c)
HERMETICALLY SEALED PACKAGE
BROAD BAND INTERNALLY MATCHED FET
MICROWAVE POWER GaAs FET
= 10
TIM1414-30L
V
UNIT
UNIT
° C/W
dBm
dBc
dB
dB
° C
%
A
A
S
V
A
V
MIN.
MIN.
44.0
-0.7
4.5
-25
-5
Rev. April 2009
TYP. MAX.
TYP. MAX.
45.0
10.0
20.0
-2.0
5.5
9.0
5.5
1.0
23
11.0
±0.8
10.1
100
-4.5
1.1

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TIM1414-30L Summary of contents

Page 1

... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefore advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TIM1414-30L BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE SYMBOL ...

Page 2

... ABSOLUTE MAXIMUM RATINGS ( Ta= 25 ° CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage PACKAGE OUTLINE (7-AA03A) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM1414-30L SYMBOL UNIT ...

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